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11NM40 PDF даташит

Спецификация 11NM40 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL SUPER-JUNCTION MOSFET».

Детали детали

Номер произв 11NM40
Описание N-CHANNEL SUPER-JUNCTION MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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11NM40 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
11NM40
Preliminary
11A, 400V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 11NM40 is an Super Junction MOSFET Structure . It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC 11NM40 is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 0.38@ VGS=10V, ID=5.7A
* High switching speed
* Low effective output capacitance (Typ.=95pF)
* Low gate charge (Typ.=40nC)
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11NM40L-TF3-T
11NM40G-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F
Pin Assignment
123
GDS
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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11NM40 Даташит, Описание, Даташиты
11NM40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS 400 V
Gate-Source Voltage
Drain Current
Continuous
TC=25°C
TC=100°C
Pulsed (Note 1)
VGSS
ID
IDM
±30
11.6
7
33
V
A
A
A
Avalanche Current (Note 1)
Single Pulsed Avalanche Energy (Note 2)
IAR
EAS
11 A
154 mJ
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
EAR
dv/dt
12.5 mJ
4.5 V/ns
Total Power Dissipation
TC=25°C
Derate above 25°C
PD
125 W
1.0 W/°C
Operating Temperature Range
Storage Temperature Range
TJ
TSTG
-55~+150
-55~+150
°C
°C
Maximum Lead Temperature for Soldering Purposes,
1/8" from Case for 5 Seconds
TL
300 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 2.3mH, IAS = 11.6A, VDD = 50V, RG = 25 , Starting TJ = 25°C
4. ISD 11.6A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1.0
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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11NM40 Даташит, Описание, Даташиты
11NM40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
VGS=0V, ID=250µA, TJ=25°C
BVDSS/TJ ID=250µA, Referenced to 25°C
Drain-Source Avalanche Breakdown
Voltage
BVDS
VGS=0V, ID=11A
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
IDSS
IGSS
VGS(TH)
RDS(ON)
VDS=400V, VGS=0V
VDS=320V, TC=125°C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
VDS=VGS, ID=250µA
VDS=10V, ID=5.7A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
CISS
COSS
CRSS
COSS
COSS eff
VGS=0V, VDS=25V, f=1.0MHz
VGS=0V, VDS=320V, f=1.0MHz
VDS=0V~320V, VGS=0V
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDS=320V, ID=11A
(Note 4, 5)
VDD=200V, ID=11A, RG=25
(Note 4, 5)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=11.6A, VGS=0V
Body Diode Reverse Recovery Time
tRR IS=11.6A, VGS=0V,
Body Diode Reverse Recovery Charge
QRR dIF/dt=100A/µs (Note 4)
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. IAS=5.5A, VDD=50V, RG=25, Starting TJ=25°C.
3. ISD11A, di/dt200A/µs, VDDBVDSS, Starting TJ=25°C.
4. Pulse Test : Pulse width300µs, Duty cycle2%.
5. Essentially independent of operating temperature.
MIN TYP MAX UNIT
400
0.6
V
V/°C
700 V
1
10
+100
-100
µA
µA
nA
nA
3.0 5.0 V
0.32 0.38
1148 1490
671 870
63 82
35
95
pF
pF
pF
pF
pF
40 52
7.2
21
55 80
115 205
330 400
140 180
nC
nC
nC
ns
ns
ns
ns
11.6 A
33 A
1.4 V
390 ns
5.7 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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