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6N65 PDF даташит

Спецификация 6N65 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 6N65
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6N65 Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
6N65
6.2A, 650V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N65 is a high voltage power MOSFET designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used in high speed
switching applications of switching power supplies and adaptors.
FEATURES
* RDS(ON) < 1.7@VGS = 10V
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N65L-TA3-T
6N65G-TA3-T
TO-220
6N65L-TF3-T
6N65G-TF3-T
TO-220F
6N65L-TF1-T
6N65G-TF1-T
TO-220F1
6N65L-TF2-T
6N65G-TF2-T
TO-220F2
6N65L-TF3T-T
6N65G-TF3T-T
TO-220F3
6N65L-TM3-T
6N65G-TM3-T
TO-251
6N65L-TMS-T
6N65G-TMS-T
TO-251S
6N65L-TN3-T
6N65G-TN3-T
TO-252
6N65L-TN3-R
6N65G-TN3-R
TO-252
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12 3
GD S
GD S
GD S
GD S
GD S
GD S
GD S
GD S
GD S
Packing
Tube
Tube
Tube
Tube
Tube
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Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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6N65 Даташит, Описание, Даташиты
6N65
MARKING INFORMATION
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251S
TO-252
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N65 Даташит, Описание, Даташиты
6N65
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 6.2 A
ID 6.2 A
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
IDM
EAS
24.8 A
440 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
TO-220
125 W
Power Dissipation
TO-220F/TO-220F1
TO-220F3
TO-220F2
PD
40 W
42 W
TO-251/TO-251S
TO-252
55 W
Junction Temperature
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 24mH, IAS = 6A, VDD = 90V, RG = 25 , Starting TJ = 25°C
4. ISD 6.2A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-220F2
TO-251/TO-251S
TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
1.0
3.2
2.97
2.27
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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