DataSheet26.com

9N40 PDF даташит

Спецификация 9N40 изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 9N40
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

4 Pages
scroll

No Preview Available !

9N40 Даташит, Описание, Даташиты
9N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 400V N-CHANNEL
POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 9N40 is an N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC 9N40 is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* RDS(ON) < 0.75@ VGS=10V, ID=4.5A
* 100% avalanche tested
SYMBOL
1
TO-220
1
TO-220F1
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
9N40L-TA3-T
9N40G-TA3-T
9N40L-TF1-T
9N40G-TF1-T
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
Pin Assignment
123
GDS
GDS
Packing
Tube
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-552.d









No Preview Available !

9N40 Даташит, Описание, Даташиты
9N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 2)
Avalanche Current (Note 2)
VGSS
ID
IDM
IAR
±30
9
36
9
V
A
A
A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
427 mJ
4.0 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5 V/ns
Power Dissipation
Derate above 25°C
TO-220
TO-220F1
TO-220
TO-220F1
PD
113 W
40 W
0.9 W/°C
0.32 W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature.
3. L = 10.5mH, IAS = 9A, VDD = 90V, RG = 25, Starting TJ = 25°C.
4. ISD 9A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
1.1
3.125
UNIT
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R502-552.d









No Preview Available !

9N40 Даташит, Описание, Даташиты
9N40
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON) VGS=10V, ID=4.5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=10V, VDS=320V, ID=9A
(Note 1, 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=200V, ID=9A, RG=25
(Note 1, 2)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=9A, VGS=0V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR IS=9A, VGS=0V, dIF/dt=100A/µs
QRR (Note 1)
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%.
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
400 V
1 µA
+100 nA
-100 nA
2.0 4.0 V
0.6 0.75
1340 1700
490 520
160 180
pF
pF
pF
34 nC
18 nC
16 nC
22 ns
60 ns
32 ns
140 ns
9A
36 A
1.7 V
350 ns
2.6 µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-552.d










Скачать PDF:

[ 9N40.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
9N40N-Channel MOSFET TransistorInchange Semiconductor
Inchange Semiconductor
9N40N-CHANNEL POWER MOSFETUnisonic Technologies
Unisonic Technologies

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск