DataSheet26.com

GS2GBF PDF даташит

Спецификация GS2GBF изготовлена ​​​​«MDD» и имеет функцию, называемую «SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER».

Детали детали

Номер произв GS2GBF
Описание SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Производители MDD
логотип MDD логотип 

2 Pages
scroll

No Preview Available !

GS2GBF Даташит, Описание, Даташиты
GS2ABF THRU GS2MBF
SURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
0.146(3.70)
0.138(3.50)
0.051(1.30)
0.043(1.10)
SMBF
Cathode Band
Top View
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Easy to pick and place
Lead free in comply with EU RoHS 2011/65/EU diretives
0.051(1.30)
0.039(1.0)
MECHANICAL DATA
0.216(5.5)
0.200(5.1)
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS GS2ABF GS2BBF GS2DBF GS2GBF GS2JBF GS2KBF GS2MBF
Marking code
S2AB S2BB S2DB S2GB S2JB S2KB S2MB
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=65 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
2.0
60
1.1
5.0
100.0
Typical junction capacitance (NOTE 1)
CJ
30
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Volts
µA
pF
Typical thermal resistance (NOTE 2)
RθJA
55 C/W
Operating junction and storage temperature range TJ,TSTG
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.5x0.5(12.7x12.7mm) copper pad areas
-55 to +150
C









No Preview Available !

GS2GBF Даташит, Описание, Даташиты
RATINGS AND CHARACTERISTIC CURVES GS2ABF THRU GS2MBF
Fig.1 Forward Current Derating Curve
2.5
100LFM
2.0
1.5
1.0
0.5
Single phase half-wave 60 Hz
0.0 resistive or inductive load
25 50 75 100 125 150 175
Ambient Temperature (°C)
Fig.2 Typical Reverse Characteristics
100
TJ=125°C
10
1.0
TJ=25°C
0.1
00 20 40 60 80 100 120 140
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
10
TJ=25°C
1.0
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5 1.0 1.5 2.0
Instaneous Forward Voltage (V)
2.5
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
60
50
40
30
20
8.3 ms Single Half Sine Wave
10 (JEDEC Method)
00
1
10
Number of Cycles
100
100
TJ=25°C
10
1
0.1 1.0 10
Reverse Voltage (V)
100










Скачать PDF:

[ GS2GBF.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
GS2GBFSURFACE MOUNT GENERAL PURPOSE SILICON RECTIFIERMDD
MDD

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск