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PDF CHV2243A Data sheet ( Hoja de datos )

Número de pieza CHV2243A
Descripción GaAs Monolithic Microwave IC
Fabricantes United Monolithic Semiconductors 
Logotipo United Monolithic Semiconductors Logotipo



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CHV2243a
RoHS COMPLIANT
Fully Integrated Q-band VCO
based on Ku-band Oscillator and Q-band Multiplier
GaAs Monolithic Microwave IC
Description
The CHV2243a is a monolithic multifunction for
frequency generation. It integrates a Ku-band
oscillator with frequency control (VCO), a Q-
band frequency multiplier and buffer amplifiers.
The VCO is fully integrated. On chip pHEMT
based Schottky diode is used as varactor. All
the active devices are internally self biased.
The circuit is manufactured with the pHEMT
process 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
Ku-band VCO + Q-band multiplier
Fully integrated VCO
Wide frequency tuning range
PLL oriented
Auxiliary output at VCO frequency
High temperature range
On-chip self biasing
Automatic assembly oriented
Chip size 2.48 x 1.18 x 0.1 mm
Main Characteristics
Tamb = +25°C
+V -V
F_VCO = F_out/3
x3
RF_out
(F_out)
V_tune
VCO_out_aux
40
39,5
39
38,5
38
37,5
37
36,5
0
Multifunction block diagram
0,5 1 1,5
Tuning voltage (V)
Typical tuning characteristic
2
Symbol
F_out
F_vco
F_tune1
Pout
Parameter
Output centre frequency
Oscillator frequency
Output frequency tuning range
Output power
Min Typ
38 38.25
F_out/3
1.5 3
48
Max
38.5
12
Unit
GHz
GHz
dBm
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Ref. : DSCHV2243a7310 - 06 Nov 07
1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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CHV2243A pdf
Q-band VCO
Typical Assembly and Bias Configuration
DC and control lines
-V +V
V_tune
>= 120pF
>= 120pF
CHV2243a
1 2 345 6 78
9
15
10 11
12
13
14
microstrip line
L_out
L_aux
microstrip line
This drawing shows an example of assembly and bias configuration. All the transistors are
internally self biased. The positive and negative voltages can be respectively connected
together (see drawing) according to the recommended values given in the electrical
characteristics table.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) has to be
according to the following recommendation.
Port
RF_out (13)
VCO_out_aux
(15)
Equivalent
inductance (nH)
L_out = 0.28
L_aux = 0.4
Approximated wire
length (mm)
0.35
0.5
For a micro-strip configuration a hole in the substrate is recommended for chip assembly.
Ref. : DSCHV2243a7310 - 06 Nov 07
5/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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