CHX2095 PDF даташит
Спецификация CHX2095 изготовлена «United Monolithic Semiconductors» и имеет функцию, называемую «GaAs Monolithic Microwave IC». |
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Детали детали
Номер произв | CHX2095 |
Описание | GaAs Monolithic Microwave IC |
Производители | United Monolithic Semiconductors |
логотип |
6 Pages
No Preview Available ! |
CHX2095
RoHS COMPLIANT
7.5-30GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description
The CHX2095 is a frequency multiplier by 4
monolithic circuit.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC grounded. This helps to simplify the
assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
Main Features
■ Broadband performance: 6.25-8.25GHz
■ 11dBm output power for +12dBm input power
■ DC power consumption, 75mA @ 3.5V (RF)
■ Chip size: 2.02 x 1.17 x 0.10mm
Main Characteristics
Tamb = 25°C
Symbol
Parameter
Fin Input frequency range
Fout Output frequency range
Pin Input power
Pout 4xFin Output power for +12dBm input power
Min Typ Max Unit
6.25 8.25 GHz
25 33 GHz
12 dBm
8 11 14 dBm
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHX20950036 - 05 Feb 10
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
No Preview Available ! |
CHX2095
7.5-30GHz Frequency Multiplier
Electrical Characteristics
These values are representative on wafer measurements
that are made without bonding wires at the RF ports.
Tamb = +25°C, Vd = 3.5V
Vg1 = Vg2 = -0.9V, Vg3 adjusted for Id = 75mA under RF Pin = +12dBm.
Symbol
Parameter
Min Typ
Fin Input frequency range
6.25
Fout Output frequency range
25
Pin Input power
12
Pout 4xFin Output power for +12dBm input power
8 11
Pout 1xFin Fin level at the output for +12dBm input power
(6.25 < Fin < 8.25GHz)
0
Pout 2xFin 2Fin level at the output for +12dBm input power
(12.5 < 2Fin < 16.5GHz)
-10
Pout 3xFin 3Fin level at the output for +12dBm input power
(18.75 < 3Fin < 24.75GHz)
0
Pout 5xFin 5Fin level at the output for +12dBm input power
(31.25 < 5Fin < 41.25GHz)
0
VSWRin Input VSWR
2.5:1
VSWRout Output VSWR
2.5:1
Id Bias current
75
A wire bond of typically 0.1 to 0.15nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb = +25°C
Max
8.25
33
14
2
3
12
Unit
GHz
GHz
dBm
dBm
dBm
dBm
dBm
dBm
mA
Symbol
Parameter
Vd Supply voltage
Id Supply current
Pin Input power
Ta Operating temperature range
Tstg Storage temperature range
Values
4.0
150
20
-40 to +85
-55 to +125
Unit
V
mA
dBm
°C
°C
(1) Operation of device above anyone of these parameters may cause permanent damage.
Ref. : DSCHX20950036 - 05 Feb 10
2/6
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
No Preview Available ! |
7.5-30GHz Frequency Multiplier
CHX2095
Typical on Wafer Measurements
Tamb = +25°C & Bias conditions: Vd = 3.5V, Vg1 = Vg 2 = -0.9V,
Vg3 adjusted for Id = 75mA under RF Pin = +12dBm.
16
12
8
4
0
-4
-8
-12
-16
-20
-24
6
Pout@Fin
Pout@3Fin
Pout@2Fin
Pout@4Fin
6.5 7 7.5
Frequency (GHz)
8
8.5
Ref. : DSCHX20950036 - 05 Feb 10
3/6 Specifications subject to change without notice
Route Départementale 128, B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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