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HBL5006 PDF даташит

Спецификация HBL5006 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «LED Shunt».

Детали детали

Номер произв HBL5006
Описание LED Shunt
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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HBL5006 Даташит, Описание, Даташиты
HBL5006 Series
LED Shunt
The HBL5006 Series are electronic shunts which provide a current
bypass in the case of LEDs going into open circuit. LEDs are by nature
quite fragile when subjected to transients and surge conditions. There
are also many cases where high reliability of the LED lighting must be
maintained such as in headlights, lighthouses, bridges, aircraft, runways
and so forth. In these cases the low cost addition of the shunt device will
provide full assurance that an entire string of LEDs will not extinguish
should one LED fail open. The shunt device is also applicable to other
loads where circuit continuity is required. The devices are designed to
be used with LED string currents from 50 to 350 mA.
Features
Protection for the Following IEC Standards:
IEC 61000−4−2 (Level 4)
ISO 10605
Low ESD Clamping Voltage
Automatically Resets Itself if the LED Heals Itself or is Replaced
ON−State Voltage Typically 1.1 V
OFF−State Current less than 1.0 mA
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
LEDs where Preventive Maintenance is Impractical
LED Headlights in Automobiles
Automotive LED Applications
LEDs with High Reliability Requirements
Crowbar Protection for Open Circuit Conditions
Overvoltage Protection for Sensitive Circuits
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MARKING
DIAGRAMS
SOD−323
CASE 477
1
2
HD
M
SOD−523
CASE 502
12
56
SOD−923
CASE 514AB
1
LD M
2
XX = Specific Device Code
M = Date Code
HBL5006
Control
Circuit
ESD
1
+
HBL5006
2
Apply heat sinking to pin 2
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 0
1
Publication Order Number:
HBL5006/D









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HBL5006 Даташит, Описание, Даташиты
HBL5006 Series
MAXIMUM RATINGS
Rating
On−State Current, (TA = 25°C) (Note 2)
SOD−323 (Note 1)
SOD−323 (Note 2)
Symbol
IT(AVG)
Value
250
200
Unit
mA
SOD−523 (Note 1)
SOD−523 (Note 2)
300
250
Thermal Resistance, Junction−to−Air (All Packages)
SOD−923 (Note 1)
SOD−923 (Note 2)
SOD−323 (Note 1)
SOD−323 (Note 2)
qJA
350
300
435 °C/W
550
SOD−523 (Note 1)
SOD−523 (Note 2)
360
435
SOD−923 (Note 1)
SOD−923 (Note 2)
285
360
Operating Temperature Range
Non−Operating Temperature Range
Lead Temperature, Soldering (10 Sec)
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
(Note 3)
TJ
TJ
TL
ESD
ESD
−40 to 150
150
260
±15
±15
°C
°C
°C
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Mounted onto a 2−layer, 1000 mm2 per layer, 3 oz Cu, FR4 PCB with pin 2 connected to the heat sink and pin 1 only connected to a signal
trace. The heat sinking must be connected to pin 2, which is the LED cathode connection.
Normally this device would be mounted on the same copper heat sink and adjacent to the LED(s). If the LED(s) were to go open, then the
HBL shunt would now dissipate the power using the same copper heat sink. Since the shunt has a voltage that is nominally 30% of the LED,
then the power dissipation would be much lower, and easily handled by the same heat sink as the LED.
2. Mounted onto a 2−layer, 50 mm2 per layer, 1 oz Cu, FR4 PCB.
3. Max operating temperature for DC conditions is 150°C, but not to exceed 175°C for pulsed conditions with low duty cycle or non−repetitive.
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HBL5006 Даташит, Описание, Даташиты
HBL5006 Series
ELECTRICAL CHARACTERISTICS (Unless otherwise noted: TA = 25°C)
Symbol
Characteristics
Package Min Typ Max Unit
VBR
Breakdown Voltage: The minimum voltage across the device in or
SOD−323 6.2
7.0
at the breakdown region. Measured at IBR = 1 mA.
SOD−523 6.2
7.0
V
SOD−923 6.2
7.0
IH Holding Current: The minimum current required to maintain the
device in the on-state.
SOD−323
SOD−523
25 40 mA
25 40
SOD−923
25 40
IL Latching Current: The minimum current required to turn from the SOD−323
off-state to the on-state.
SOD−523
9.0
9.0
mA
SOD−923
9.0
VBO Breakover Voltage: The voltage across the device in the breakover SOD−323 6.5 7.2 8.0
region.
SOD−523 6.5 7.2 8.0
V
SOD−923 6.5 7.2 8.0
IR Off−State Current: The dc value of current that results from the
application of the off-state voltage. Measured at 3.3 V.
SOD−323
SOD−523
1.0 mA
1.0
SOD−923
1.0
VT On−State Voltage. Measured at 100 mA.
SOD−323 0.9 1.1 1.3
SOD−523 0.9 1.1 1.3
V
SOD−923 0.9 1.1 1.3
VC Clamping Voltage
SOD−323
TLP (Note 4)
IPP = 8 A
} IEC 6100−4−2 Level 2 equivalent
(±4 kV Contact, ±4 kV Air)
SOD−523
6.5
11.2
6.5
11.2
V
}IPP = 16 A
IEC 6100−4−2 Level 4 equivalent
(±8 kV Contact, ±15 kV Air)
SOD−923
6.5
11.2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model TLP conditions: Z0 = 50 W,
tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
Current
On−state
Current
Holding Current
Latching Current
Voltage
Off−state
Current
Breakdown
Voltage
Breakover
Voltage
Figure 1. I−V Characteristics
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