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CHT4401PT PDF даташит

Спецификация CHT4401PT изготовлена ​​​​«CHENMKO» и имеет функцию, называемую «NPN Switching Transistor».

Детали детали

Номер произв CHT4401PT
Описание NPN Switching Transistor
Производители CHENMKO
логотип CHENMKO логотип 

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CHT4401PT Даташит, Описание, Даташиты
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 40 Volts CURRENT 0.6 Ampere
CHT4401PT
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
* Small flat package. ( SOT-23 )
* Low current (Max.=600mA).
* Suitable for high packing density.
* Low voltage (Max.=40V) .
* High saturation current capability.
* Voltage controlled small signal switch.
CONSTRUCTION
* NPN Switching Transistor
MARKING
* S1P
SOT-23
(1)
(3)
(2)
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
CIRCUIT
3
1
2
.045 (1.15)
.033 (0.85)
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC collector current DC
Ptot total power dissipation
Tamb 25 °C; note1
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
55
55
MAX.
UNIT
60 V
40 V
6V
600
350
+150
150
+150
mA
mW
°C
°C
°C
2004-11









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CHT4401PT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHT4401PT )
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
UNIT
°C/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
PARAMETER
CONDITIONS
MIN.
collector cut-off current
emitter cut-off current
DC current gain
IE = 0; VCB = 60 V
IC = 0; VEB = 6 V
VCE = 1 V; note 1
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 1 50 mA
VCE = 2 V;note 2
IC = 500 mA
20
40
80
100
40
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
IC = 150 mA; IB = 1 5 mA
IC = 500 mA; IB = 5 0 mA
IC = 150 mA; IB = 15 mA
750
IC = 500 mA; IB = 5 0 mA
IE = ie = 0; VCB = 5 V; f = 1 4 0 K Hz
IC = ic = 0; VBE = 500 mV;
f = 140KHz
transition frequency
IC = 20 mA; VCE = 10 V;
f = 100 MHz
250
MAX.
50
50
300
400
750
950
1200
6.5
30
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
Switching times (between 10% and 90% levels);
ton turn-on time
td delay time
tr rise time
toff turn-off time
ts storage time
tf fall time
ICon = 150 mA; IBon = 15 mA;
IBoff = 1 5 mA
Note
1. Pulse test: tp 300 µs; δ ≤ 0.02.
35 ns
15 ns
20 ns
250 ns
200 ns
60 ns









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CHT4401PT Даташит, Описание, Даташиты
RATING CHARACTERISTIC CURVES ( CHT4401PT )
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1 0.3 1 3 10 30 100 300
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
0.2
0.1
1
125 °C
25 °C
- 40 °C
10 100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter Saturation
Voltage vs Collector Current
1 β = 10
- 40 °C
0.8 25 °C
125 °C
0.6
0.4
1
10 100
I C - COLLECTOR CURRENT (mA)
500
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8 - 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1 10
I C - COLLECTOR CURRENT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
500
100 VCB= 40V
10
1
0.1
25 50 75 100 125 150
TA - AMBIENT TEMPERATURE (°C)
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20 f = 1 MHz
16
12
8
4
0.1
C
C ob
1 10
REVERSE BIAS VOLTAGE (V)
100










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Номер в каталогеОписаниеПроизводители
CHT4401PTNPN Switching TransistorCHENMKO
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