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CHA3512 PDF даташит

Спецификация CHA3512 изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «GaAs Monolithic Microwave IC».

Детали детали

Номер произв CHA3512
Описание GaAs Monolithic Microwave IC
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHA3512 Даташит, Описание, Даташиты
CHA3512
RoHS COMPLIANT
6-18GHz Low Noise Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3512 is composed by a Single Pole
Double Through (SPDT) switch followed by
a one step digital attenuator and a double
stage travelling wave amplifier. It is designed
for defense applications. The backside of the
chip is both RF and DC grounded. This
helps to simplify the assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
Performances: 6-18GHz
23dBm saturated output power
16dB gain
1 bit attenuator for 20dB dynamic range
DC power consumption: 210mA @ 4.5V
Chip size: 4.27 x 2.46 x 0.1mm
0dB state
20dB state
Typical on wafer Measurements
Gain versus attenuation states
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Min Typ Max Unit
Fop Operating frequency range 6
18 GHz
G Small signal gain @ Attenuator state 0dB
16 dB
Psat
Saturated Output power @ Attenuator state 0dB
23
dBm
ATT dyn
Attenuator range
20 dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions !
Ref. DSCHA3512-8144 - 23 May 08
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09









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CHA3512 Даташит, Описание, Даташиты
CHA3512
6-18GHz Digital Variable Amplifier
Electrical Characteristics on wafer
Tamb = +25°C
Vd = Pads B, D = 4.5V, Vg = Pads A, C tuned for Id = 210mA
Symbol
Parameter
Fop Operating frequency range (1)
Min Typ Max Unit
6 18 GHz
G Small signal gain @ Attenuator state 0dB (1)
16
6-16GHz
14 16
dB
16-18GHz
10 13
ATT dyn Attenuator range
19 20 22 dB
Is Isolation @ Attenuator state 0dB & switch OFF
(1)
-25 -35
dB
P1dB Output power at 1dB compression @ Attenuator 20 dBm
state 0dB (1)
Psat Saturated Output power @ Attenuator state 0dB 23 dBm
(1)
NF Noise figure @ Attenuator state 0dB
7 dB
RL_IN Input Return Loss all attenuator states (switch
ON)
-15 -8 dB
RL_OUT Output Return Loss all attenuator states (switch
ON and switch OFF)
-20 -6 dB
Vd Drain bias DC voltage (Pads B, D)
4.5 V
Id Bias current @ small signal
210 250 mA
Vc Control voltage for Attenuator bit & SPDT switch -5
0V
(1) These values are representative for on-wafer measurements that are made without bonding
wires at the RF ports.
Ref. DSCHA3512-8144 - 23 May 08
2/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09









No Preview Available !

CHA3512 Даташит, Описание, Даташиты
6-18GHz Digital Variable Amplifier
CHA3512
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd Maximum Drain bias voltage ( Pads B, D)
+5 V
Id Drain bias current with Vd=4.5V
300 mA
Vg Gate bias voltage (Pads A,C)
-2 to +0.4
V
Vc Attenuator bit & SPDT control voltage
-7 to +0.6
V
Pin Maximum input power overdrive (2)
+20.0
dBm
Tch Maximum channel temperature
+175
°C
Ta Operating temperature range
-40 to +70
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
Thermal Resistance channel to ground paddle =123°C/ W for Tamb. = +70°C.
LNA Control interface
The attenuator state is controlled by 2 voltages. The SPDT switch is controlled by 2 voltages.
state
0
1
2
Theoretical
attenuation
(dB)
0 référence
20
Isolation
Voltage CONTROL
PAD
20A 20B
(V) (V)
-5 0
0 -5
-5 0
Switch control
EF
(V) (V)
-5 0
-5 0
0 -5
Ref. : DSCHA3512-8144 - 23 May 08
3/10
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09










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