|
|
PDF CHA6005-99F Data sheet ( Hoja de datos )
| Número de pieza | CHA6005-99F | |
| Descripción | GaAs Monolithic Microwave IC | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de CHA6005-99F (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
CHA6005-99F
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-99F is a high power amplifier
monolithic circuit, which integrates two
stages and produces 32.5dBm output power
associated to a high power added efficiency
of 38%.
It is designed for a wide range of
applications, from military to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Main Features
■ High power : 32.5dBm
■ High PAE : 38%
■ Frequency band : 8-12GHz
■ Linear gain : 22dB
■ DC bias: Vd=8Volt@Id=350mA
■ Chip size 3x1.5x0.1mm
34 600
32 550
30 500
28 450
Linear Gain (dB)
26
Pout @ Pin=14 dBm (3dBcomp)
400
Idrain @ Pin=14 dBm (3dBcomp)
24 350
22 300
20 250
18 200
8 8.5 9 9.5 10 10.5 11 11.5 12
Freq (GHz)
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G Linear Gain
P1dB Output Power @ 3dB comp.
PAE Power Added Efficiency @ 3dB comp.
Min Typ Max Unit
8 12 GHz
22 dB
31.5 dBm
38 %
Ref. : DSCHA60052244 - 31 Aug 12
1/10 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page  
8-12GHz High Power Amplifier
CHA6005-99F
Typical on Test Fixture Measurements
Tamb.= +25°C,
Vd = 8V, Id (Quiescent) = 350mA, Drain Pulse width = 25µs, Duty cycle = 10%
Linear Gain versus Frequency
25
23
21
19
17
15
8
36
8.5 9 9.5 10 10.5 11 11.5
Freq (GHz)
Output Power @ 1&3dBcomp versus Frequency
12
35
34
33
32
31
30
Pout @ Pin=11 dBm (1dBcomp)
29
Pout @ Pin=14 dBm (3dBcomp)
28
8 8.5 9 9.5 10 10.5 11 11.5 12
Freq (GHz)
Ref. : DSCHA60052244 - 31 Aug 12
5/10 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet CHA6005-99F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CHA6005-99F | GaAs Monolithic Microwave IC | United Monolithic Semiconductors |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |