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PDF CHA6005-QEG Data sheet ( Hoja de datos )
| Número de pieza | CHA6005-QEG | |
| Descripción | GaAs Monolithic Microwave IC | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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CHA6005-QEG
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-QEG is a high power amplifier
monolithic circuit, which integrates two
stages and produces 31.5dBm output power
associated to a high power added efficiency
of 33%.
It is designed for a wide range of
applications, from professional to commercial
communication systems.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is supplied in a RoHS compliant SMD
package.
Main Features
■ High power: 31.5dBm
■ High PAE: 33%
■ Frequency band: 8-12GHz
■ Linear gain: 20dB
■ DC bias: VD=8Volt@Id=420mA
■ 24L-QFN4x5
■ MSL3
50
45
40
35
30
25
20
15
10
5
0
7
0.7
0.6
0.5
0.4
0.3
Pout_1dBcomp
Linear Gain
8 9 10 11
Frequency (GHz)
ID (A)
0.2
12 13
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Freq Frequency range
G Linear Gain
P1dB Output Power @ 1dB comp.
PAE1dB Power Added Efficiency @ 1dB comp.
Min Typ Max Unit
8 12 GHz
20 dB
31.5 dBm
33 %
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
1/12 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
1 page  
8-12GHz High Power Amplifier
CHA6005-QEG
Typical Board Measurements
Temperature : -40, +25, +85°C
VD1,2 = 8V, Id (Quiescent) = 420mA, CW mode
25
24
23
22
21
20
19
18
17
16
15
7
Linear Gain versus Frequency and Temperature
-40 C
+85 C
+25 C
8 9 10 11
Frequency (GHz)
12
13
Output Power at 3dBcomp versus Frequency and Temperature
35
34
33
32
31
30
29
28
Temp=-40 C & Pin=13dBm
27
Temp=+25 C & Pin=15dBm
26
Temp=+85 C & Pin=17dBm
25
7 8 9 10 11 12 13
Frequency (GHz)
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
5/12 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
5 Page 
8-12GHz High Power Amplifier
DC Schematic
8V, 420mA
CHA6005-QEG
VG1
VD1
VG2
VD2
400 Ω
IN
400 Ω
400 Ω
400 Ω
OUT
Package Information
Parameter
Package body material
Lead finish
MSL Rating
Value
RoHS-compliant
Low stress Injection Molded Plastic
100% matte tin ( Sn)
MSL3
Ref. : DSCHA6005-QEG5070 – 11 Mar 15
11/12
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CHA6005-QEG.PDF ] | |
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