DataSheet26.com

CHA6552-QJG PDF даташит

Спецификация CHA6552-QJG изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «GaAs Monolithic Microwave IC».

Детали детали

Номер произв CHA6552-QJG
Описание GaAs Monolithic Microwave IC
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

18 Pages
scroll

No Preview Available !

CHA6552-QJG Даташит, Описание, Даташиты
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The CHA6552-QJG is a three stage
monolithic GaAs high power circuit producing
YYWWG
4 Watt output power.
UMS A366878A
UMSUMS
A366878AIt is designed for Point to Point radio and
A6Y5Y52WWG
commercial communication systems.
YYWWGThe circuit is manufactured with a pHEMT
YYWWAU36M6878SA
process, 0.5µm gate length.
It is supplied in RoHS compliant SMD
package.
Main Features
40
Broadband performances: 5.8- 8.5GHz
39
36dBm saturated power
38
35dBm at 1dB compression
22dB gain
DC bias: Vd = 7.0Volt @ Id = 1.8A
QFN6x6
UMSMSL3
37
36
35
34
33
32
31
30
5
Pout & PAE versus frequency
P-1dB at 1.8 A Psat at 1.8 A PAE at 1.8A
6789
Frequency (GHz)
40
38
36
34
32
30
28
26
24
22
20
10
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
5.8 8.5 GHz
A3687AGain
Psat
OIP3
Linear Gain
Saturated output power
Output IP3
22 dB
36 dBm
45 dBm
Ref. : DSCHA6552-QJG4147 - 27 May 14
1/18 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









No Preview Available !

CHA6552-QJG Даташит, Описание, Даташиты
CHA6552-QJG
5.8- 8.5GHz Power Amplifier
Electrical Characteristics
Tamb.= +25°C, Vd = +7.0V
Symbol
Parameter
Fop Operating frequency range
G Small Signal Gain
ΔG Gain variation in temperature
P1dB Output power @1dB compression
Psat Saturated output power
OIP3 Output IP3
PAE PAE at 1dB compression
Rlin Input Return Loss
Rlout
Dr (1)
Output Return Loss
Detection dynamic range
Vdetect1 Voltage detection Vref1-Vdet1 up to Psat
Vdetect2 Voltage detection Vref2-Vdet2 up to Psat
Vg DC Gate voltage
Idet Detector current
Idq Total quiescent drain current
Min Typ Max Unit
5.8 8.5 GHz
22 dB
+/-0.035
dB/°C
35 dBm
36 dBm
45 dBm
22 %
12 dB
15 dB
30 dB
5 to 1200
mV
5 to 1200
mV
-0.4 V
3 mA
1800
mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
(1) Dr: Output power detection up to Psat.
Ref. : DSCHA6552-QJG4147 - 27 May 14
2/18 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34









No Preview Available !

CHA6552-QJG Даташит, Описание, Даташиты
5.8- 8.5GHz Power Amplifier
CHA6552-QJG
Absolute Maximum Ratings (1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
Vd Drain bias voltage
7.5 V
Idq Quiescent drain bias current
2.5 A
Vg Gate bias voltage
Pin Maximum peak input power overdrive (2)
-2 to 0
20
V
dBm
Tj Junction temperature
175 °C
Ta Operating temperature range
-40 to +85
°C
Tstg Storage temperature range
-55 to +150
°C
(1) Operation of this device above anyone of these parameters may cause permanent
damage.
Typical Bias Conditions
Tamb.= +25°C
Symbol Pad No
VD1 13, 38
VD2 16, 35
VD3 19, 32
VG1
14, 37
VG2
17, 34
VDC1,2 23, 29
Parameter
DC Drain voltage 1st stage
DC Drain voltage 2nd stage
DC Drain voltage 3rd stage
DC Gate voltage 1st & 2nd stage
DC Gate voltage 3rd stage
DC Detector biasing voltage
Values
7
7
7
-0.4
-0.4
7
Unit
V
V
V
V
V
V
Ref. : DSCHA6552-QJG4147 - 27 May 14
3/18 Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34










Скачать PDF:

[ CHA6552-QJG.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
CHA6552-QJGGaAs Monolithic Microwave ICUnited Monolithic Semiconductors
United Monolithic Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск