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CHC3014-99F PDF даташит

Спецификация CHC3014-99F изготовлена ​​​​«United Monolithic Semiconductors» и имеет функцию, называемую «GaAs Monolithic Microwave IC».

Детали детали

Номер произв CHC3014-99F
Описание GaAs Monolithic Microwave IC
Производители United Monolithic Semiconductors
логотип United Monolithic Semiconductors логотип 

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CHC3014-99F Даташит, Описание, Даташиты
CHC3014-99F
RoHS COMPLIANT
X-band Core Chip
GaAs Monolithic Microwave IC
Description
The CHC3014-99F is a Receive and
Transmit X band Core Chip.
It includes a 6 bit phase shifter, a 6 bit
attenuator, a second 2 bit attenuator for
tuning, self-biased buffers, switch and TTL
compatible parallel interfaces.
This device is manufactured 0.25µm pHEMT
process, including via holes through the
substrate.
It is available in chip form.
Main Features
Operating frequency range: 8 -12GHz
Receive path linear gain: 13.5dB
Transmit path linear gain: 25dB
Phase shift range: 0-360°(step 5.625°)
Fine attenuator: 34.65dB (step 0.55dB)
Tuning attenuator: 6dB (step 2dB)
Chip size: 4.47 x 5.07 x 0.1mm
Main Characteristics
Tamb.= +25°C, V+ = 5V / V- = -5V
Symbol
Parameter
Min Typ Max Unit
Freq Frequency range
8 12 GHz
Rms_pe RMS phase error
Rms_att RMS attenuation error
0.3 dB
P-1dB Rx
Psat Tx
NF
Output power at RxOUT @1dB gain comp.
Output power at TxOUT at saturation
Noise figure in Rx mode
16.5
20
5.8
dBm
dBm
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHC3014-0293 - 20 Sep 10
1/20
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - BP46 - 91401 Orsay Cedex France
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09









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CHC3014-99F Даташит, Описание, Даташиты
CHC3014-99F
X-band Core Chip
Main Characteristics (1/2)
Tamb.= +25°C
Symbol
Parameter
Freq Operating frequency
Gl Rx
Mode Rx
Linear gain in Rx mode at reference state (1)
S11 Rx Input Return Loss in Rx mode
S22 Rx
NF
Output Return Loss in Rx mode
Noise figure in Rx mode (2)
P-1dB Rx Output power at RxOUT at 1dB gain comp.
Gl Tx
Mode Tx
Linear gain in Tx mode at reference state (1)
S11 Tx Input Return Loss in Tx mode
S22 Tx Output Return Loss in Tx mode
PIN Tx Input power range in Tx saturated mode
Psat Tx
S11ISO.
PPE
Rms_pe
Ampvar
Rms
Ampvar
Output power at TxOUT in saturated mode
Isolated Mode (3)
Return Loss at Rxin/Txout
6 bit Phase shifter (4)
Phase shift elementary step
Peak phase error
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
8GHz-8.5GHz
8.5GHz-11.5GHz
11.5GHz-12GHz
RMS phase error
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
8GHz-8.5GHz
8.5GHz-11.5GHz
11.5GHz-12GHz
Amplitude variation
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
RMS Amplitude variation
(Rx, Tx, fine attenuator state < 33
tuning attenuator state 1)
Min Typ Max Unit
8 12 GHz
11.5
13.5
-14
-18
5.8
16.5
dB
dB
dB
dB
dBm
22 25
dB
-14 dB
-12 dB
0 15 dBm
20 dBm
-15
0-360
5.625
dB
°
°
4±6
0±6
4±6
2.5
2
2.5
0±1
0.3
°
°
dB
dB
(1) Reference state: Tuning attenuator state = 1 / Fine attenuator state = 0 /
Phase shifter state = 0
(2) Noise Figure value for Tuning attenuator state = 0 / Fine attenuator state = 0 /
Phase shifter state = 0
(3) In this mode, the MFC presents a matched load on the RF access pad Rxin/Txout
Ref. : DSCHC3014-0293 - 20 Sep 10
2/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice









No Preview Available !

CHC3014-99F Даташит, Описание, Даташиты
X-band Core Chip
CHC3014-99F
Main Characteristics (2/2)
Tamb.= +25°C
Symbol
Parameter
6 bit Fine Attenuator (4)
Fine Attenuator elementary step
Attenuation error
Att_erratt
(Rx, all phase shifter states
tuning attenuator state 1)
Attenuation state 0-32
Attenuation state 33-47
Attenuation state 48-63
Rms_att
RMS attenuation error
(Rx, all phase shifter states
tuning attenuator state 1)
Phase variation
Phi_varatt
(Rx, all phase shifter states
tuning attenuator state 1)
Attenuation state 0-32
Attenuation state 33-47
Attenuation state 48-63
Rms_Phi
var
RMS Phase variation
(Rx, all phase shifter states
tuning attenuator state 1)
2 bit Tuning Attenuator (5)
Tuning Attenuator elementary step
Att_ErrTB
Phi_varTB
Tuning attenuation error
Phase variation of tuning attenuator
Biasing (6)
V+ Positive supply voltage
V- Negative supply voltage
TI_Low Control voltage low level
TI_High Control voltage high level
I_+5_Rx Biasing current in RX mode
I_+5_Tx Biasing current in TX mode
I_+5
interface
I_-5
Control interface DC current
Negative DC current
Min Typ Max Unit
34.65
dB
0.55
dB
0 ± 0.5
-0.25 ± 0.75
-0.5 ± 1.5
0.3
dB
dB
0±3
-1 ± 5
-4 ± 6
°
6
2
± 0.3
±2
dB
dB
dB
°
5V
-5 V
0 0.4 V
2.4 +3.3 / +5 7.0 V
350
350 (7)
470 (8)
mA
mA
25 mA
-50 mA
(4) Low influence of cross-talking between phase shifter and fine attenuator
(5) This function allows to adjust roughly the linear gain
(6) Each Amplifiers of Rx and Tx paths can be switched off thanks to separate biasing
pads (c.f. pad allocation table)
(7) Tx linear mode
(8) Tx saturated mode
Ref. : DSCHC3014-0293 - 20 Sep 10
3/20
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09
Specifications subject to change without notice










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Номер в каталогеОписаниеПроизводители
CHC3014-99FGaAs Monolithic Microwave ICUnited Monolithic Semiconductors
United Monolithic Semiconductors

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