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6N60Z PDF даташит

Спецификация 6N60Z изготовлена ​​​​«Unisonic Technologies» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв 6N60Z
Описание N-CHANNEL POWER MOSFET
Производители Unisonic Technologies
логотип Unisonic Technologies логотип 

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6N60Z Даташит, Описание, Даташиты
UNISONIC TECHNOLOGIES CO., LTD
6N60Z
6.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 6N60Z is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in switching power supplies and
adaptors.
FEATURES
* RDS(ON) < 1.75@ VGS = 10V, ID = 3.1A
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
6N60ZL-TF3-T
6N60ZG-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12 3
GD S
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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6N60Z Даташит, Описание, Даташиты
6N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
±20
V
V
Avalanche Current (Note 2)
Continuous Drain Current
IAR 6.2 A
ID 6.2 A
Pulsed Drain Current (Note 2)
IDM 24.8 A
Avalanche Energy
Single Pulsed (Note 3)
Repetitive (Note 2)
EAS
EAR
252 mJ
13 mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
ns
Power Dissipation
Junction Temperature
PD 40 W
TJ
+150
°C
Operating Temperature
Storage Temperature
TOPR
TSTG
-55 ~ +150
-55 ~ +150
°C
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L = 14mH, IAS = 6A, VDD = 90V, RG = 25 , Starting TJ = 25°C
4. ISD 6.2A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATING
62.5
3.2
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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6N60Z Даташит, Описание, Даташиты
6N60Z
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250μA
600
V
VDS = 600V, VGS = 0V
10 μA
Drain-Source Leakage Current
IDSS VDS = 480V, VGS = 0V,
TJ=125°C
100 μA
Gate- Source Leakage Current
Forward
Reverse
IGSS
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
10 μA
-10 μA
Breakdown Voltage Temperature Coefficient BVDSS/TJ ID=250μA, Referenced to 25°C
0.53
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 3.1A
2.0 4.0 V
1.4 1.75
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V,
f=1.0 MHz
770 1000 pF
95 120 pF
10 13 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=0~10V, VDD=30V,
ID =0.5A, RG =25
(Note 1, 2)
VGS=10V, VDD=50V, ID=1.3A
IG=100μA (Note 1, 2)
45 60
95 110
185 200
110 125
32.8
7.0
9.8
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 6.2 A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
1.4 V
6.2 A
24.8 A
Reverse Recovery Time
trr VGS = 0 V, IS = 6.2 A,
Reverse Recovery Charge
QRR dIF/dt = 100 A/μs (Note 1)
Notes: 1. Pulse Test: Pulse width 300μs, Duty cycle 2%
2. Essentially independent of operating temperature
290 ns
2.35 μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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