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HFA60PA60C PDF даташит

Спецификация HFA60PA60C изготовлена ​​​​«nELL» и имеет функцию, называемую «Ultrafast Soft Recovery Diode».

Детали детали

Номер произв HFA60PA60C
Описание Ultrafast Soft Recovery Diode
Производители nELL
логотип nELL логотип 

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HFA60PA60C Даташит, Описание, Даташиты
SEMICONDUCTOR
HFA60PA60C RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode
2 x 30A / 600V
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low IRRM
Very low Qrr
Specified at operating conditions
Designed and qualified for industrial level
Planar FRED Chip
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
HFA60PA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 600V and 30A per leg continuous current, the
HFA60PA60C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
current (IRRM) and does not exhibit any tendency to
“snap-off” during the tb portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA60PA60C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
TO-247 AB
common
cathode
2
13
Anode
1
2
Anode
2
Common
cathode
PRODUCT SUMMARY
VR
VF at 30A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr (typical)
lRRM (typical)
600 V
1.7 V
2 x 30 A
25 ns
175 °C
130 nC
3.0 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
per leg
per device
Single pulse forward current
Operating junction and storage temperature range
SYMBOL
VR
IF
lFSM
TJ, TStg
TEST CONDITIONS
Tc = 115 ºC
VALUES
600
30
60
300
- 55 to + 175
UNITS
V
A
ºC
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HFA60PA60C Даташит, Описание, Даташиты
SEMICONDUCTOR
HFA60PA60C RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Cathode to anode
breakdown voltage
VBR
Maximum forward voltage
VFM
Maximum reverse
leakage current
Junction capacitance
IRM
CT
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
IR = 100 µA
600
IF = 30 A
IF = 60 A
IF = 30 A, TJ = 125 ºC
VR = VR rated
TJ = 150VR = VR rated
VR = 200V
-
-
-
-
-
-
TYP.
-
1.4
1.7
1.1
1.0
-
36
MAX. UNITS
-
1.7 V
2.0
1.4
10
µA
500
- pF
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
IF = 0.5A, IR = 1.0A, IRR = 0.25A (RG#1 CKT)
trr
IF = 1.0 A, dIF/dt = 100 A/µs, VR =30 V, TJ = 25°C
trr1 TJ = 25 ºC
-
-
-
32 38
25 -
30 50
Peak recovery current
Reverse recovery charge
trr2
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
IF= 30A
dIF/dt = 200 A/µs
VR = 400 V
- 175 -
-3-
-6-
- 130 -
- 485 -
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
0.063'' from case (1.6 mm) for 10 s
RthJC
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AB (JEDEC)
MIN.
-
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.8
UNITS
°C
- 0.4
K/W
- 40
0.4 -
6.0 -
0.21 -
12
-
(10)
HFA60PA60C
g
oz.
kgf . cm
(lbf . in)
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HFA60PA60C Даташит, Описание, Даташиты
SEMICONDUCTOR
HFA60PA60C RRooHHSS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10-5
D = 0.9
0.7
0.5
0.3
0.1
0.05
10-4
SINGLE PULSE
10-3
10-2
Rectangular pulse duration (seconds)
Note :
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZthJC+TC
10-1
1.0
Fig.2 Forward current vs. forward voltage
100
80
TJ = 175°C
60
TJ = 125°C
40
20
0
0
TJ = -55°C
TJ = 25°C
0.5 0.8 1.0 1.4 1.8 2.2
Anode-to-cathode voltage, VF (V)
Fig.3 Reverse recovery time vs. current rate of change
200
180
160
140
120
100
80
60
40
20
0
0
60A
TJ = 125°C
VR = 400V
30A
15A
200 400 600 800 1000 1200
Current rate of change, -diF/dt (A/μs)
Fig.4 Reverse recovery charge vs. current rate of change
1200
1000
TJ = 125°C
VR = 400V
60A
800
600
400
30A
15A
200
0
0
200 400 600 800 1000 1200
Current rate of change, -diF/dt (A/μs)
Fig 5. Reverse recovery current vs. current rate of change
25
TJ = 125°C
VR = 400V
20
60A
15 30A
10
5 15A
0
0 200 400 600 800 1000 1200
Current rate of change (A/μs), -diF/dt
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HFA60PA60CUltrafast Soft Recovery DiodenELL
nELL

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