C5843 PDF даташит
Спецификация C5843 изготовлена «NEC» и имеет функцию, называемую «NPN SiGe RF TRANSISTOR». |
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Детали детали
Номер произв | C5843 |
Описание | NPN SiGe RF TRANSISTOR |
Производители | NEC |
логотип |
7 Pages
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DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5843
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• Ideal for low noise, high-gain amplification
NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• SiGe technology (fT = 60 GHz, fmax = 60 GHz)
• 6-pin lead-less minimold (M16, 1208 package)
ORDERING INFORMATION
Part Number
2SC5843
2SC5843-T3
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 6 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
P Note
tot
Tj
Tstg
Ratings
8.0
2.3
1.2
35
80
150
−65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
Unit
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10353EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices 2003
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ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Maximum Stable Power Gain
Symbol
Test Conditions
ICBO VCB = 5 V, IE = 0 mA
IEBO VEB = 0.5 V, IC = 0 mA
h Note 1
FE
VCE = 2 V, IC = 5 mA
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
NF VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
C Note 2
re
VCB = 2 V, IE = 0 mA, f = 1 MHz
MSG Note 3 VCE = 2 V, IC = 20 mA, f = 2 GHz
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
S21
S12
hFE CLASSIFICATION
Rank
Marking
hFE Value
FB
zD
200 to 400
2SC5843
MIN. TYP. MAX. Unit
− − 200 nA
− − 200 nA
200 − 400 −
16.0
−
−
18.0
18.0
0.9
0.17
20.0
−
1.1
0.22
−
dB
dB
pF
dB
2 Data Sheet PU10353EJ02V0DS
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2SC5843
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Mounted on Glass Epoxy PCB
(1.08 cm2 × 1.0 mm (t) )
200
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
f = 1 MHz
0.2
150
100
80 0.1
50
0 25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
0 2 4 6 8 10
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
11
0.1 0.1
0.01
0.01
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
35 190 µA
30 160 µA
25 130 µA
20 100 µA
15 70 µA
10 40 µA
5
IB = 10 µA
0 123
Collector to Emitter Voltage VCE (V)
0.001
0.0001
0.4
0.5 0.6 0.7 0.8 0.9
Base to Emitter Voltage VBE (V)
1.0
Remark The graphs indicate nominal characteristics.
Data Sheet PU10353EJ02V0DS
3
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