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Número de pieza | 70T03GP | |
Descripción | AP70T03GP | |
Fabricantes | Advanced Power Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 70T03GP (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Advanced Power
Electronics Corp.
AP70T03GS/P
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low Gate Charge
▼ Fast Switching Speed
▼ RoHS Compliant
G
D
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
30V
9mΩ
60A
G D S TO-263(S)
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70T03GP) are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=100℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
G
D
S
Rating
30
±20
60
43
195
53
0.36
-55 to 175
-55 to 175
TO-220(P)
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
200411052-1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 70T03GP.PDF ] |
Número de pieza | Descripción | Fabricantes |
70T03GH | 30V, 60A, N-Channel Power MOSFET, AP70T03GH | Advanced Power Electronics |
70T03GJ | SSM70T03GJ | Silicon Standard |
70T03GP | AP70T03GP | Advanced Power Electronics |
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