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Número de pieza | S2206 | |
Descripción | N-channel SiC power MOSFET bare die | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de S2206 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! S2206
N-channel SiC power MOSFET bare die
VDSS
RDS(on) (Typ.)
ID
650V
120mW
29A*1
Data Sheet
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
lInner circuit
(D)
(G)
(S)
(G) Gate
(D) Drain
(S) Source
*1 Body Diode
lApplication
• Solar inverters
• DC/DC converters
• Switch mode power supplies
• Induction heating
• Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID,pulse *2
VGSS
Tj
Tstg
Value
650
29
72
-6 to 22
175
-55 to +175
Unit
V
A
A
V
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.07 - Rev.A
1 page S2206
lElectrical characteristic curves
Fig.1 Typical Output Characteristics(I)
28
26
24
VGS= 20V
VGS= 18V
VGS= 16V
22
20
18
16
14
12
10
8
6
4
2
0
02
4
Ta = 25ºC
Pulsed
VGS= 14V
VGS= 12V
10V
8V
6 8 10
Drain - Source Voltage : VDS [V]
Data Sheet
Fig.2 Typical Output Characteristics(II)
14
13 VGS= 20V
12
VGS= 18V
VGS= 16V
11
10
9
8
7
6
5
4
3
2
1
0
01
Ta = 25ºC
Pulsed
VGS= 14V
VGS= 12V
VGS= 10V
VGS= 8V
2345
Drain - Source Voltage : VDS [V]
Fig.3 Tj = 150°C Typical Output
Characteristics(I)
28
26 VGS= 20V
24 VGS= 18V
22 VGS= 16V
20
VGS= 14V
VGS= 12V
18
16
14
12
10
8 VGS= 10V
6
4
2
VGS= 8V
Ta = 150ºC
Pulsed
0
0 2 4 6 8 10
Drain - Source Voltage : VDS [V]
Fig.4 Tj = 150°C Typical Output
Characteristics(II)
14
13 VGS= 20V
12 VGS= 18V
11 VGS= 16V
10
9
VGS= 14V
VGS= 12V
8
7
6
5
4
3
2
1
0
01
2
VGS= 10V
VGS= 8V
Ta = 150ºC
Pulsed
345
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.07 - Rev.A
5 Page S2206
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Data Sheet
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Switching Energy Measurement Circuit
Same type
device as
D.U.T.
Fig.3-2 Switching Waveforms
Eon = ID×VDS
Eoff = ID×VDS
VDS
Irr
Vsurge
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
11/11
2014.07 - Rev.A
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet S2206.PDF ] |
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