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S6201 PDF даташит

Спецификация S6201 изготовлена ​​​​«ROHM Semiconductor» и имеет функцию, называемую «SiC Schottky Barrier Diode Bare Die».

Детали детали

Номер произв S6201
Описание SiC Schottky Barrier Diode Bare Die
Производители ROHM Semiconductor
логотип ROHM Semiconductor логотип 

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S6201 Даташит, Описание, Даташиты
S6201
SiC Schottky Barrier Diode Bare Die
VR 650V
IF 6A*1
QC 9nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lInner circuit
(C)
(A)
lConstruction
Silicon carbide epitaxial planer type
Schottky diode
Data Sheet
(C) Cathode
(A) Anode
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Junction temperature
VRM 650
VR 650
IF 6*1
24*2
IFSM
91*3
18*4
IFRM
26*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
Unit
V
V
A
A
A
A
A
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/3
2014.05 - Rev.A









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S6201 Даташит, Описание, Даташиты
S6201
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.12mA
600 -
-
IF=6A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=6A,Tj=150°C
- 1.55 -
IF=6A,Tj=175°C
- 1.63 -
VR=600V,Tj=25°C
- 1.2 120
Reverse current
IR VR=600V,Tj=150°C
- 18 -
VR=600V,Tj=175°C
- 42 -
Total capacitance
VR=1V,f=1MHz
C
VR=600V,f=1MHz
- 219 -
- 22 -
Total capacitive charge
Qc VR=400V,di/dt=350A/ms - 9 -
Switching time
tc VR=400V,di/dt=350A/ms - 12 -
Unit
V
V
V
V
mA
mA
mA
pF
pF
nC
ns
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/3
2014.05 - Rev.A









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S6201 Даташит, Описание, Даташиты
S6201
lElectrical characteristic curves
Data Sheet
Fig.1 VF - IF Characteristics
100
Pulsed
10
Ta=175ºC
1
Ta=125ºC
0.1
Ta=75ºC
Ta=25ºC
0.01 Ta= -25ºC
0.001
0.0
0.5 1.0 1.5 2.0 2.5
Forward Voltage : VF [V]
Fig.2 VF - IF Characteristics
10
9 Pulsed Ta= -25ºC
8
7
6
5
4
3
 2
1
0
0.0 0.5 1.0 1.5
Ta=25ºC
Ta=75ºC
Ta=125ºC
Ta=175ºC
2.0 2.5
Forward Voltage : VF [V]
Fig.3 VR - IR Characteristics
100
Ta=175ºC
10 Ta=125ºC
Ta=75ºC
1 Ta=25ºC
Ta= -25ºC
0.1
0.01
0.001
0
100 200 300 400 500 600
Reverse Voltage : VR [V]
Fig.4 VR-Ct Characteristics
1,000
100
10
Ta=25ºC
f=1MHz
1
0.01 0.1 1 10 100 1000
Reverse Voltage : VR [V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/3
2014.05 - Rev.A










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