S6203 PDF даташит
Спецификация S6203 изготовлена «ROHM Semiconductor» и имеет функцию, называемую «SiC Schottky Barrier Diode Bare Die». |
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Детали детали
Номер произв | S6203 |
Описание | SiC Schottky Barrier Diode Bare Die |
Производители | ROHM Semiconductor |
логотип |
4 Pages
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S6203
SiC Schottky Barrier Diode Bare Die
VR 650V
IF 20A*1
QC 31nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lInner circuit
(C)
(A)
lConstruction
Silicon carbide epitaxial planer type
Schottky diode
Data Sheet
(C) Cathode
(A) Anode
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Junction temperature
VRM 650
VR 650
IF 20*1
71*2
IFSM
260*3
56*4
IFRM
76*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
*1 Limited by Tj *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Duty cycle=10%, limited by Tj
Unit
V
V
A
A
A
A
A
°C
°C
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© 2014 ROHM Co., Ltd. All rights reserved.
1/3
2014.05 - Rev.A
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S6203
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.4mA
600 -
-
IF=20A,Tj=25°C
- 1.35 1.55
Forward voltage
VF IF=20A,Tj=150°C
- 1.55 -
IF=20A,Tj=175°C
- 1.63 -
VR=600V,Tj=25°C
- 4 400
Reverse current
IR VR=600V,Tj=150°C
- 60 -
VR=600V,Tj=175°C
- 140 -
Total capacitance
VR=1V,f=1MHz
C
VR=600V,f=1MHz
- 730 -
- 74 -
Total capacitive charge
Qc VR=400V,di/dt=350A/ms - 31 -
Switching time
tc VR=400V,di/dt=350A/ms - 19 -
Unit
V
V
V
V
mA
mA
mA
pF
pF
nC
ns
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© 2014 ROHM Co., Ltd. All rights reserved.
2/3
2014.05 - Rev.A
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S6203
lElectrical characteristic curves
Data Sheet
Fig.1 VF - IF Characteristics
100
Pulsed
10
Ta=175ºC
Ta=125ºC
1
Ta=75ºC
0.1
Ta=25ºC
Ta= -25ºC
0.01
0.001
0.0
0.5 1.0 1.5 2.0 2.5
Forward Voltage : VF [V]
Fig.2 VF - IF Characteristics
30
Pulsed Ta= -25ºC
25
20
Ta=25ºC
Ta=75ºC
15 Ta=125ºC
Ta=175ºC
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5
Forward Voltage : VF [V]
Fig.3 VR - IR Characteristics
100
Ta=175ºC
10 Ta=125ºC
Ta=75ºC
1 Ta=25ºC
Fig.4 VR-Ct Characteristics
10,000
Ta=25ºC
f=1MHz
1,000
0.1
0.01
0.001
0
Ta= -25ºC
100 200 300 400 500 600
Reverse Voltage : VR [V]
100
10
0.01
0.1 1 10 100 1000
Reverse Voltage : VR [V]
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© 2014 ROHM Co., Ltd. All rights reserved.
3/3
2014.05 - Rev.A
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