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PDF NTB75N03-06 Data sheet ( Hoja de datos )
| Número de pieza | NTB75N03-06 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTP75N03-06,
NTB75N03-06
Power MOSFET
75 Amps, 30 Volts
N–Channel TO–220 and D2PAK
This 10 VGS gate drive vertical Power MOSFET is a general
purpose part that provides the “best of design” available today in a low
cost power package. Avalanche energy issues make this part an ideal
design in. The drain–to–source diode has a ideal fast but soft recovery.
Features
• Ultra–Low RDS(on), Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTP1306 and MTB1306 in Many Applications
© Semiconductor Components Industries, LLC, 2000
December, 2000 – Rev. 0
1
http://onsemi.com
75 AMPERES
30 VOLTS
RDS(on) = 6.5 mΩ
N–Channel
D
G
4S
4
1
2
3
TO–220AB
CASE 221A
STYLE 5
12
3
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
E75
N03–06
YWW
1
Gate
3
Source
E75
N03–06
YWW
1
Gate
2
Drain
3
Source
2
Drain
N03–06
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
NTP75N03–06
TO–220
50 Units/Rail
NTB75N03–06
D2PAK
50 Units/Rail
NTB75N03–06T4 D2PAK 800 Tape & Reel
Publication Order Number:
NTP75N03–06/D
1 page  
NTP75N03–06, NTB75N03–06
1200
1000
800
VGS VDS
VDS = 0 V
VGS = 0 V
TJ = 25°C
600 Ciss
400
Coss
200
Crss
0
10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 22 25
GATE–TO–SOURCE OR DRAIN–TO–SOURCE
VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
12 30
10 QT 25
8
6 Q1
4
Q2
VGS
20
15
10
2 ID = 75 A 5
TJ = 25°C
00
0 4 8 12 16 20 24 28 32 36 40 44 48 52
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate–to–Source Voltage vs. Total Charge
1000
tr
tf
100
td(off)
td(on)
10
1 2.2
TJ = 25°C
ID = 75 A
VDD = 15 V
VGS = 5 V
4.7 6.2 9.1 10 20
RG, GATE RESISTANCE (Ω)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
75
70 VGS = 0 V
65 TJ = 25°C
60
55
50
45
40
35
30
25
20
15
10
5
0
0.0 0.2 0.4 0.6 0.8 1.0
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1600
1400
ID = 75 A
1200
1000
800
600
400
200
0
25 50
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NTB75N03-06.PDF ] | |
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