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NSBC143EF3 PDF даташит

Спецификация NSBC143EF3 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Digital Transistors».

Детали детали

Номер произв NSBC143EF3
Описание Digital Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSBC143EF3 Даташит, Описание, Даташиты
MUN2232, MMUN2232L,
MUN5232, DTC143EE,
DTC143EM3, NSBC143EF3
Digital Transistors (BRT)
R1 = 4.7 kW, R2 = 4.7 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
30
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
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PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
XM 1
SOT723
CASE 631AA
STYLE 1
SOT1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2013 Rev. 2
1
Publication Order Number:
DTC143E/D









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NSBC143EF3 Даташит, Описание, Даташиты
MUN2232, MMUN2232L, MUN5232, DTC143EE, DTC143EM3, NSBC143EF3
Table 1. ORDERING INFORMATION
Device
Part Marking
Package
Shipping
MUN2232T1G, SMUN2232T1G
8J
SC59
3000 / Tape & Reel
(PbFree)
MMUN2232LT1G, NSVMMUN2232LT1G
A8J
SOT23
3000 / Tape & Reel
(PbFree)
NSVMMUN2232LT3G
A8J
SOT23
10000 / Tape & Reel
(PbFree)
MUN5232T1G, SMUN5232T1G
8J
SC70/SOT323
3000 / Tape & Reel
(PbFree)
DTC143EET1G
8J
SC75
3000 / Tape & Reel
(PbFree)
DTC143EM3T5G
8J
SOT723
8000 / Tape & Reel
(PbFree)
NSBC143EF3T5G
P
SOT1123
8000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
300
250
200
(1) (2) (3) (4) (5)
150
100
(1) SC75 and SC70/SOT323; Minimum Pad
(2) SC59; Minimum Pad
(3) SOT23; Minimum Pad
(4) SOT1123; 100 mm2, 1 oz. copper trace
(5) SOT723; Minimum Pad
50
0
50 25
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
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NSBC143EF3 Даташит, Описание, Даташиты
MUN2232, MMUN2232L, MUN5232, DTC143EE, DTC143EM3, NSBC143EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SC59) (MUN2232)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT23) (MMUN2232L)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC70/SOT323) (MUN5232)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Thermal Resistance,
(Note 1)
Junction to Lead (Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SC75) (DTC143EE)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Junction and Storage Temperature Range
THERMAL CHARACTERISTICS (SOT723) (DTC143EM3)
Total Device Dissipation
TA = 25°C
(Note 1)
(Note 2)
Derate above 25°C
(Note 2)
(Note 1)
Thermal Resistance,
Junction to Ambient
(Note 1)
(Note 2)
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
RqJL
TJ, Tstg
PD
RqJA
TJ, Tstg
PD
RqJA
TJ, Tstg
Max Unit
230
338
1.8
2.7
540
370
264
287
55 to +150
mW
mW/°C
°C/W
°C/W
°C
246
400
2.0
3.2
508
311
174
208
55 to +150
mW
mW/°C
°C/W
°C/W
°C
202
310
1.6
2.5
618
403
280
332
55 to +150
mW
mW/°C
°C/W
°C/W
°C
200
300
1.6
2.4
600
400
55 to +150
mW
mW/°C
°C/W
°C
260
600
2.0
4.8
480
205
55 to +150
mW
mW/°C
°C/W
°C
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Номер в каталогеОписаниеПроизводители
NSBC143EF3Digital TransistorsON Semiconductor
ON Semiconductor

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