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PDF CZT5551E Data sheet ( Hoja de datos )
| Número de pieza | CZT5551E | |
| Descripción | SURFACE MOUNT NPN SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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CZT5551E
ENHANCED SPECIFICATION
SURFACE MOUNT
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551E is an
NPN Silicon Transistor, packaged in an SOT-223 case,
designed for general purpose amplifier applications
requiring high breakdown voltage.
MARKING: FULL PART NUMBER
SOT-223 CASE
APPLICATIONS:
• General purpose switching and amplification
• Telephone applications
MAXIMUM RATINGS: (TA=25°C)
♦ Collector-Base Voltage
♦ Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• High Collector Breakdown Voltage 250V
• Low Leakage Current 50nA MAX
• Low Saturation Voltage 100mV MAX @ 50mA
• Complementary Device: CZT5401E
• SOT-223 Surface Mount Package
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
250
220
6.0
600
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
IEBO
♦ BVCBO
♦ BVCEO
BVEBO
♦ VCE(SAT)
♦ VCE(SAT)
VBE(SAT)
VBE(SAT)
VCB=120V
VCB=120V, TA=100°C
VEB=4.0V
IC=100µA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
250
220
6.0
♦ Enhanced specification
MAX
50
50
50
75
100
1.00
1.00
UNITS
nA
μA
nA
V
V
V
mV
mV
V
V
R1 (1-March 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CZT5551E.PDF ] | |
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