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S-LMUN5141T1G PDF даташит

Спецификация S-LMUN5141T1G изготовлена ​​​​«Leshan Radio Company» и имеет функцию, называемую «Bias Resistor Transistor».

Детали детали

Номер произв S-LMUN5141T1G
Описание Bias Resistor Transistor
Производители Leshan Radio Company
логотип Leshan Radio Company логотип 

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S-LMUN5141T1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
LMUN5141T1G
S-LMUN5141T1G
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
3
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
1
2
CASE 419, STYLE 3
SOT–323 (SC–70)
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
PIN 1
BASE
(INPUT)
R
1
R
2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
eliminating the possibility of damage to the die.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
LMUN5141T1G
S-LMUN5141T1G
Marking
6U
Shipping
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC 100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
PD
RθJA
RθJL
TJ, Tstg
Max
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
–55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
Rev.O 1/4









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S-LMUN5141T1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LMUN5141T1G, S-LMUM5141T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VBE = 6.0 V)
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
Collector-Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
ICBO
ICEO
IEBO
V(BR)CBO
V(BR)CEO
50
50
ON CHARACTERISTICS (Note 3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k)
Input Resistor
Resistor Ratio
hFE
VCE(sat)
VOL
VOH
R1
R1/R2
160
4.9
70
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
Typ Max Unit
– 100 nAdc
– 500 nAdc
0.1 mAdc
– – Vdc
– – Vdc
350 –
0.25
– 0.2
––
100 130
––
Vdc
Vdc
Vdc
k
300
250
200
150
100
50
0
50 25
0 25 50 75 100
AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
125 150
Rev.O 2/4









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S-LMUN5141T1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
LMUN5141T1G, S-LMUM5141T1G
10
IC/IB = 10
1
25°C
0.1 150°C
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10
150°C
25°C
55°C
55°C
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
1
50 1
VCE = 10 V
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
7 100
6
5
f = 10 kHz
IE = 0 A
TA = 25°C
150°C
10
25°C
55°C
41
3 0.1
2
0.01
1
VO = 5 V
0 0.001
0 10 20 30 40 50
0 4 8 12 16 20 24 28
VR, REVERSE VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 4. Output Capacitance
Figure 5. Output Current vs. Input Voltage
100
55°C
10 25°C
150°C
1
0.1
0
VO = 0.2 V
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
50
Rev.O 3/4










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Номер в каталогеОписаниеПроизводители
S-LMUN5141T1GBias Resistor TransistorLeshan Radio Company
Leshan Radio Company

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