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NR8300FP-CC PDF даташит

Спецификация NR8300FP-CC изготовлена ​​​​«CEL» и имеет функцию, называемую «InGaAs APD IN COAXIAL PACKAGE».

Детали детали

Номер произв NR8300FP-CC
Описание InGaAs APD IN COAXIAL PACKAGE
Производители CEL
логотип CEL логотип 

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NR8300FP-CC Даташит, Описание, Даташиты
NEC's φ30 µm
InGaAs APD IN COAXIAL PACKAGE
FOR FIBER OPTIC COMMUNICATION
AND OTDR APPLICATIONS
NR8300FP-CC
FEATURES
SMALL DARK CURRENT:
ID = 5 nA
SMALL TERMINAL CAPACITANCE:
CT = 0.35 pF at 0.9 VBR
HIGH QUANTUM EFFICIENCY:
η = 90% at λ = 1310 nm, M = 1
η = 77% at λ = 1550 nm, M = 1
HIGH SPEED RESPONSE:
fc = 2.5 GHz at M = 10
DETECTING AREA SIZE:
φ30 µm
COAXIAL MODULE WITH SINGLE MODE FIBER
(SM-9/125)
DESCRIPTION
NEC'S NR8300FP-CC is an InGaAs avalanche photo diode
module with single mode fiber. It is designed for optical test
instruments, especially OTDR systems.
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PART NUMBER
NR8300FP-CC
SYMBOLS
VBR
δ
ID
IDM
Ct
fC
η
S
M
X
F
ORL
PARAMETERS AND CONDITIONS
Reverse Breakdown Voltage, ID = 100 µA
Temperature Coefficient of Reverse Breakdown
Voltage1
Dark Current, VR = VBR x 0.9
Multiplied Dark Current, M = 2 to 10
Terminal Capacitance, VR = VBR x 0.9, f = 1 MHz
Cut-off Frequency, M = 10
Quantum Efficiency, λ = 1310 nm, M = 1
λ = 1550 nm, M = 1
Responsivity, λ = 1310 nm, M = 1
λ = 1550 nm, M = 1
Multiplication Factor, λ = 1310 nm, IPO = 1.0 µA,
VR = V (at ID = 1 µA)
Excess Noise Factor2, λ = 1310 nm, 1 550 nm,
IPO = 1.0 µA, M = 10, f = 35 MHz, B = 1 MHz
Optical Return Loss, SMF
VBR < 25°C + T°C > - VBR < 25°C>
Note: 1. δ =
T°C > - VBR < 25°C>
2. F = MX
UNITS
V
%/°C
nA
nA
pF
GHz
%
A/W
M
dB
MIN
50
2.5
76
65
0.80
0.81
30
30
TYP
70
0.2
5
1
0.35
90
77
0.94
0.96
40
0.7
5
MAX
100
25
5
0.60
California Eastern Laboratories









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NR8300FP-CC Даташит, Описание, Даташиты
NR8300FP-CC
ABSOLUTE MAXIMUM RATINGS1
(TC = 25°C, unless otherwise specified)
SYMBOLS
PARAMETERS
IF Forward Current
IR Reverse Current
TC Operating Case Temp.
TSTG Storage Temperature
TSOL Lead Soldering Temp.
RH Relative Humidity
(noncondensing)
UNITS
mA
mA
°C
°C
°C
%
RATINGS
10
0.5
-40 to +85
-40 to +85
260 (10 sec.)
85
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TC = 25°C, unless otherwise specified)
WAVELENGTH DEPENDENCE OF
QUANTUM EFFICIENCY
100
80
60
40
20
0
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
Wavelength, λ (µm)
DARK CURRENT AND PHOTO
CURRENT vs. REVERSE VOLTAGE
10 -3
10 -4
λ = 1310 nm
IPC = 1.0 µA
10 -5
Iph
10 -6
10 -7
10 -8
10 -9
ID
10 -10
0
20 40 60 80
Reverse Voltage, VR (V)
100
TEMPERATURE DEPENDENCE OF
RESPONSIVITY
10
λ = 1 300 nm
0
-10
-60 -40 -20 0 20 40 60 80 100
Case Temperature, TC (°C)
DARK CURRENT
vs. REVERSE VOLTAGE
10 -6
10 -7
10 -8
10 -9
10 -10
0
TC = 85¡C
TC = 65¡C
TC = 25¡C
TC = 20¡C
20 40 60 80
Reverse Voltage, VR (V)
100









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NR8300FP-CC Даташит, Описание, Даташиты
TYPICAL PERFORMANCE CURVES (TC = 25°C)
MULTIPLICATION FACTOR
vs. REVERSE VOLTAGE
10 3
10 2
TC = 20˚C
TC = 25˚C
10 1 TC = 65˚C
10 0
0
TC = 85˚C
20 40 60 80
Reverse Voltage, VR (V)
100
TERMINAL CAPACITANCE
vs. REVERSE VOLTAGE
2
1
0.5
0.2
0.1
1
2
5 10 20
50 100
Reverse Voltage, VR (V)
FREQUENCY RESPONSE
λ = 1310 nm
9
RL = 50
M = 10
6
3
0
-3
-6
-9
0 1.0 2.0 3.0 4.0 5.0
Frequency, f (GHz)
Remark: The graphs indicate nominal characteristics.
NR8300FP-CC
TEMPERATURE DEPENDENCE OF
DARK CURRENT vs. MULTIPLIED
DARK CURRENT
10 -6
λ = 1310 nm
10 -7
ID at VR = 0.9 V(BR)R
10 -8
IDM
10 -9
10 -10
10 -11
-60 -40 -20
0
20 40 60 80 100
Case Temperature, TC (°C)
CUT-OFF FREQUENCY
vs. MULTIPLICATION FACTOR
100
λ = 1310 nm
10
G x B = 50 GHz
1
0.1
1
10 100
Multiplication Factor, M
EXCESS NOISE FACTOR
vs. MULTIPLICATION FACTOR
100
1310 nm ( ), 1550 nm ( )
f = 35 MHz, B = 1 MHz
50
0.5
0.4
20
10
5
2
1
12
5 10 20
50 100
Multiplication Factor, M










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Номер в каталогеОписаниеПроизводители
NR8300FP-CCPHOTO DIODE MODULENEC
NEC
NR8300FP-CCInGaAs APD IN COAXIAL PACKAGECEL
CEL

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