CGHV59350 PDF даташит
Спецификация CGHV59350 изготовлена «Cree» и имеет функцию, называемую «GaN HEMT». |
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Детали детали
Номер произв | CGHV59350 |
Описание | GaN HEMT |
Производители | Cree |
логотип |
12 Pages
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PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN:
440217
CGHV59350
and 440218
Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.55 GHz
5.9 GHz
Output Power
440 445 490
Gain
10.5
10.5
11
Drain Efficiency
59 54
Note:
Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm
55
Units
W
dB
%
Features
• 5.2 - 5.9 GHz Operation
• 450 W Typical Output Power
• 10.5 dB Power Gain
• 55% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1
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Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Pulse Width
PW 100 µs
Duty Cycle
DC 10 %
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
125
-10, +2
-65, +150
225
64
24
245
40
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
25˚C
25˚C
25˚C
25˚C
Pulsed Thermal Resistance, Junction to Case
RθJC
0.31
˚C/W
100 μsec, 10%, 85˚C , PDISS = 320 W
Case Operating Temperature
TC
-40, +85
˚C
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library
Electrical Characteristics
Characteristics
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
Symbol
VGS(th)
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS
Drain-Source Breakdown Voltage
VBR
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
Min.
-3.8
–
48
150
Typ.
-3.0
-2.7
57.8
–
Max.
-2.3
–
–
–
Units
Conditions
VDC VDS = 10 V, ID = 64 mA
VDC VDS = 50 V, ID = 1.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 64 mA
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
No Preview Available ! |
Electrical Characteristics Continued...
Characteristics
Symbol
Min.
Typ.
RF Characteristics3 (TC = 25˚C, F0 = 5.2 - 5.9 GHz unless otherwise noted)
Output Power at 5.2 GHz
POUT1 – 440
Output Power at 5.55 GHz
POUT2 – 445
Output Power at 5.9 GHz
POUT3 – 490
Gain at 5.2 GHz
GP1 – 10.5
Gain at 5.55 GHz
GP2 – 10.5
Gain at 5.9 GHz
GP3 – 11
Drain Efficiency at 5.2 GHz
DE1 – 59
Drain Efficiency at 5.55 GHz
DE2 – 54
Drain Efficiency at 5.9 GHz
DE3 – 55
Small Signal Gain
S21 – 15
Max.
–
–
–
–
–
–
–
–
–
–
Input Return Loss
S11 – -7 –
Output Return Loss
S22 – -11 –
Amplitude Droop
D – -0.3 –
Output Stress Match
VSWR
–
5:1
–
Notes:
3 Measured in CGHV59350-TB. Pulse Width = 100 μS, Duty Cycle = 10%.
Units Conditions
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
No damage at all phase angles,
Y
VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Pulsed
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
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