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CGHV59350 PDF даташит

Спецификация CGHV59350 изготовлена ​​​​«Cree» и имеет функцию, называемую «GaN HEMT».

Детали детали

Номер произв CGHV59350
Описание GaN HEMT
Производители Cree
логотип Cree логотип 

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CGHV59350 Даташит, Описание, Даташиты
PRELIMINARY
CGHV59350
350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.
Package
Type:
PN:
440217
CGHV59350
and 440218
Typical Performance Over 5.2 - 5.9 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
5.2 GHz
5.55 GHz
5.9 GHz
Output Power
440 445 490
Gain
10.5
10.5
11
Drain Efficiency
59 54
Note:
Measured in the CGHV59350-TB under 100 μs pulse width, 10% duty cycle, PIN = 46 dBm
55
Units
W
dB
%
Features
• 5.2 - 5.9 GHz Operation
• 450 W Typical Output Power
• 10.5 dB Power Gain
• 55% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop
Subject to change without notice.
www.cree.com/rf
1









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CGHV59350 Даташит, Описание, Даташиты
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Pulse Width
PW 100 µs
Duty Cycle
DC 10 %
Drain-Source Voltage
Gate-to-Source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
IDMAX
TS
τ
125
-10, +2
-65, +150
225
64
24
245
40
Volts
Volts
˚C
˚C
mA
A
˚C
in-oz
25˚C
25˚C
25˚C
25˚C
Pulsed Thermal Resistance, Junction to Case
RθJC
0.31
˚C/W
100 μsec, 10%, 85˚C , PDISS = 320 W
Case Operating Temperature
TC
-40, +85
˚C
Notes:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library
Electrical Characteristics
Characteristics
DC Characteristics1 (TC = 25˚C)
Gate Threshold Voltage
Symbol
VGS(th)
Gate Quiescent Voltage
VGS(Q)
Saturated Drain Current2
IDS
Drain-Source Breakdown Voltage
VBR
Notes:
1 Measured on wafer prior to packaging.
2 Scaled from PCM data.
Min.
-3.8
48
150
Typ.
-3.0
-2.7
57.8
Max.
-2.3
Units
Conditions
VDC VDS = 10 V, ID = 64 mA
VDC VDS = 50 V, ID = 1.0 A
A VDS = 6.0 V, VGS = 2.0 V
VDC VGS = -8 V, ID = 64 mA
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf









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CGHV59350 Даташит, Описание, Даташиты
Electrical Characteristics Continued...
Characteristics
Symbol
Min.
Typ.
RF Characteristics3 (TC = 25˚C, F0 = 5.2 - 5.9 GHz unless otherwise noted)
Output Power at 5.2 GHz
POUT1 440
Output Power at 5.55 GHz
POUT2 445
Output Power at 5.9 GHz
POUT3 490
Gain at 5.2 GHz
GP1 10.5
Gain at 5.55 GHz
GP2 10.5
Gain at 5.9 GHz
GP3 11
Drain Efficiency at 5.2 GHz
DE1 – 59
Drain Efficiency at 5.55 GHz
DE2 54
Drain Efficiency at 5.9 GHz
DE3 – 55
Small Signal Gain
S21 15
Max.
Input Return Loss
S11 -7
Output Return Loss
S22 -11
Amplitude Droop
D -0.3
Output Stress Match
VSWR
5:1
Notes:
3 Measured in CGHV59350-TB. Pulse Width = 100 μS, Duty Cycle = 10%.
Units Conditions
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
W VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
% VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = -10 dBm
dB VDD = 50 V, IDQ = 1 A, PIN = 46 dBm
No damage at all phase angles,
Y
VDD = 50 V, IDQ = 1 A, PIN = 46 dBm Pulsed
Copyright © 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3 CGHV59350 Rev 0.0 - PRELIMINARY
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf










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