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SDF05N40T PDF даташит

Спецификация SDF05N40T изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDF05N40T
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDF05N40T Даташит, Описание, Даташиты
SDF05N40T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (Ω) Typ
400V 5A 2.4 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDF05N40PT
TO-220F
Marking Code
05N40T
Delivery Mode
Tube
RoHS Status
Pb Free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed a
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
400
±30
5
4.2
15
24
75
52.5
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2 °C/W
50 °C/W
Details are subject to change without notice.
1
Jan,27,2014
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SDF05N40T Даташит, Описание, Даташиты
SDF05N40T
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=320V , VGS=0V
VGS= ±20V , VDS=0V
400 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=2.5A
VDS=10V , ID=2.5A
234 V
2.4 3.2 ohm
1.8 S
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
245 pF
38 pF
7.5 pF
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=200V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=200V,ID=1A,VGS=10V
VDS=200V,ID=1A,
VGS=10V
14 ns
12 ns
18 ns
5 ns
4.9 nC
1.4 nC
1.8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Drain current limited by maximum junction temperature.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure 13.)
0.805 1.4
V
Jan,27,2014
2 www.samhop.com.tw









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SDF05N40T Даташит, Описание, Даташиты
SDF05N40T
5
VGS = 10V
4 VGS = 7V
3
VGS = 6V
2
1
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
5
4
3
2
VGS = 10V
1
0.1
0.01 0.7 1.4 2.1 2.8 3.5
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.0
2.5
2.0
Tj=125 C
1.5
-55 C
1.0
25 C
0.5
0
0 1.3 2.6 3.9 5.2 6.5 7.8
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6 V G S =10V
ID= 2.5A
2.2
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Jan,27,2014
www.samhop.com.tw










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