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SDF06N60 PDF даташит

Спецификация SDF06N60 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDF06N60
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDF06N60 Даташит, Описание, Даташиты
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP06N60
SDF06N60
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V
6A
1.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP06N60HZ
TO-220
SDP06N60PZ
TO-220
SDF06N60HZ
TO-220F
SDF06N60PZ
TO-220F
Marking Code
SDP06N60
06N60
SDF06N60
06N60
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP06N60 SDF06N60
VDS Drain-Source Voltage
VGS Gate-Source Voltage
600
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
66
4.2 4.2
IDM -Pulsed a
18 18
EAS Single Pulse Avalanche Energy c
361
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
107 36
54 18
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.4 4.2
62.5 62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw









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SDF06N60 Даташит, Описание, Даташиты
SDP06N60
SDF06N60
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VDS=20V , ID=3A
VDS=25V,VGS=0V
f=1.0MHz
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Typ Max Units
1
±100
V
uA
nA
34V
1.3 1.6 ohm
5.2 S
855 pF
83 pF
9 pF
35 ns
19 ns
37 ns
15 ns
18 nC
3.5 nC
7.6 nC
0.82 1.4
V
Dec,24,2013
2 www.samhop.com.tw









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SDF06N60 Даташит, Описание, Даташиты
SDP06N60
SDF06N60
12
VGS =10V
10
VGS =7V
8
VGS =6V
6
4
2 VGS =5V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 2.1
5
4
3
T j=125 C
2
25 C
-55 C
1
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
3.0
2.5
2.0
V GS =10V
1.5
1.0
0.5
0
0.1 2 4 6 8 10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 V G S =10V
ID=3A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
SDF06N60N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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