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SDF07N65 PDF даташит

Спецификация SDF07N65 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDF07N65
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDF07N65 Даташит, Описание, Даташиты
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP07N65
SDF07N65
Ver 3.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
650V
7A
1.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP07N65HZ
TO-220
SDP07N65PZ
TO-220
SDF07N65HZ
TO-220F
SDF07N65PZ
TO-220F
Marking Code
SDP07N65
07N65
SDF07N65
07N65
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP07N65 SDF07N65
VDS Drain-Source Voltage
VGS Gate-Source Voltage
650
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
77
5.9 5.9
IDM -Pulsed a
21 21
EAS Single Pulse Avalanche Energy c
422
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
133 66
93 46
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.1 2.2 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
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SDF07N65 Даташит, Описание, Даташиты
SDP07N65
SDF07N65
Ver 3.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
650 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3.5A
VDS=20V , ID=3.5A
VDS=25V,VGS=0V
f=1.0MHz
VDD=325V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=325V,ID=1A,VGS=10V
VDS=325V,ID=1A,
VGS=10V
234V
1.2 1.4 ohm
5.5 S
1025
110
13
pF
pF
pF
40 ns
21 ns
53 ns
23 ns
21 nC
3.6 nC
8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5mH,VDD = 100V.(See Figure12)
0.78 1.4
V
Dec,24,2013
2 www.samhop.com.tw









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SDF07N65 Даташит, Описание, Даташиты
SDP07N65
SDF07N65
15
VGS = 10V
VGS = 7V
12
VGS = 6V
9
6
3 VGS = 5V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 3.0
5
4
Tj = 125 C
3
-55 C
2
25 C
1
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5
VGS = 10V
1.0
0.5
0.0
1 3 6 9 12 15
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 VGS = 10V
ID = 3.5A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
VDS = VGS
ID = 250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID = 250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
SDF07N65N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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