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SDD02N60 PDF даташит

Спецификация SDD02N60 изготовлена ​​​​«SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв SDD02N60
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители SamHop Microelectronics
логотип SamHop Microelectronics логотип 

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SDD02N60 Даташит, Описание, Даташиты
SDU/D02N60Green
Product
Sa mHop Microelectronics C orp.
Ver 2.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
600V
2A
4.7 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU02N60HZ
TO-252
SDD02N60HS
TO-251S
SDD02N60HL
TO-251L
Marking Code
SDU02N60
SDD02N60
SDD02N60
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a d
TC=25°C
TC=100°C
IDM -Pulsed b
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
Limit
600
±30
2
1.3
5.8
42
17
Units
V
V
A
A
A
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
3 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw









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SDD02N60 Даташит, Описание, Даташиты
SDU/D02N60
Ver 2.2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=1A
VDS=20V , ID=1A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=300V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
Typ
3
3.6
1.6
300
37
9
17.5
17
21
8
7
1.5
2.9
Max Units
1
±100
V
uA
nA
4V
4.7 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Drain current limited by maximum junction temperature.
0.79 1.4
V
Dec,24,2013
2 www.samhop.com.tw









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SDD02N60 Даташит, Описание, Даташиты
SDU/D02N60
5
4
VGS = 10V
3 VGS = 6V
2
VGS = 5V
1
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
9.0
7.5
6.0
4.5
3.0 V G S =10V
1.5
0
0.1 0.7 1.4 2.1 2.8 3.5
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 2.2
1.80
1.44
1.08
Tj=125 C
-55 C
0.72
25 C
0.36
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2 V G S =10V
ID= 1A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw










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Номер в каталогеОписаниеПроизводители
SDD02N60N-Channel Enhancement Mode Field Effect TransistorSamHop Microelectronics
SamHop Microelectronics

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