SDD03N70 PDF даташит
Спецификация SDD03N70 изготовлена «SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | SDD03N70 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | SamHop Microelectronics |
логотип |
11 Pages
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SDU/D03N70Green
Product
SamHop Microelectronics corp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
700V
3A
3.9 @VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU03N70HZ
TO-252
Marking Code
SDU03N70
Delivery Mode
Reel
RoHS Status
Halogen Free
SDD03N70HS
TO-251S
SDD03N70
Tube
Halogen Free
SDD03N70HL
TO-251L
SDD03N70
Tube
Halogen Free
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
EAS
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed a
Single Pulse Avalanche Energy c
Maximum Power Dissipation
TC=25°C
TC=70°C
TC=25°C
TC=70°C
Limit
700
±30
3
2.5
9
156
75
52.5
Units
V
V
A
A
A
mJ
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
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SDU/D03N70
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=560V , VGS=0V
VGS= ±30V , VDS=0V
700 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=1.5A
VDS=20V , ID=1.5A
2 34 V
3.9 4.8 ohm
1.94 S
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
417 pF
45 pF
8 pF
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=350V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=350V,ID=1A,VGS=10V
VDS=350V,ID=1A,
VGS=10V
19 ns
15.3 ns
26 ns
11.2 ns
8.3 nC
1.7 nC
2.7 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13)
0.79 1.4
V
Dec,24,2013
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SDU/D03N70
5
VGS=10V
4
3
2 VGS=5V
1
VGS=4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
12
10
8
6 VGS=10V
4
2
0
0.1 1 2 3 4
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Ver 1.1
2.0
1.6
Tj=125 C
1.2
-55 C
0.8
25 C
0.4
0
0 1 23 456
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
VGS=10V
2.2 ID=1.5A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.6
VDS=VGS
1.4 ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
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SDD03N70 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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