SDU05N70 PDF даташит
Спецификация SDU05N70 изготовлена «SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | SDU05N70 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | SamHop Microelectronics |
логотип |
11 Pages
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SDU/D05N70Green
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
700V
5A
1.6 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU05N70HZ
TO-252
SDD05N70HS
TO-251S
SDD05N70HL
TO-251L
Marking Code
SDU05N70
SDD05N70
SDD05N70
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous
IDM -Pulsed a
TC=25°C
TC=70°C
EAS Single Pulse Avalanche Energy c
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
Limit
700
±30
5
4.2
15
400
75
52.5
Units
V
V
A
A
A
mJ
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
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SDU/D05N70
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=560V , VGS=0V
VGS= ±30V , VDS=0V
700 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=2.5A
VDS=20V , ID=2.5A
234V
1.6 2 ohm
5S
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
926 pF
85 pF
11 pF
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=350V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=350V,ID=1A,VGS=10V
VDS=350V,ID=1A,
VGS=10V
33 ns
18 ns
44 ns
17 ns
18 nC
2.9 nC
6.4 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure13)
0.75 1.4
V
Dec,24,2013
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SDU/D05N70
10
VGS = 10V
8 VGS = 6V
6 VGS = 5V
4
2
VGS = 4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6
5
4
3
2 V G S =10V
1
0
0.1 2
46
8
ID, Drain Current (A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
3
Ver 1.1
4.0
3.2
Tj=125 C
2.4
1.6
25 C
-55 C
0.8
0
0 1.2 2.4 3.6 4.8 6.0 7.2
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0
2.6
2.2 V G S =10V
ID= 2.5A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj( C)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,24,2013
www.samhop.com.tw
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SDU05N70 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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