SDD06N60 PDF даташит
Спецификация SDD06N60 изготовлена «SamHop Microelectronics» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor». |
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Детали детали
Номер произв | SDD06N60 |
Описание | N-Channel Enhancement Mode Field Effect Transistor |
Производители | SamHop Microelectronics |
логотип |
11 Pages
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SDU/D06N60Green
Product
Sa mHop Microelectronics C orp.
Ver 1.0
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 6A 1.18 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU06N60HZ
TO-252
SDD06N60HS
TO-251S
SDD06N60HL
TO-251L
Marking Code
SDU06N60
SDD06N60
SDD06N60
Delivery Mode
Reel
Tube
Tube
RoHS Status
Halogen Free
Halogen Free
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C
TC=100°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
600
±30
6
4.2
18
430
83
42
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8 °C/W
50 °C/W
Details are subject to change without notice.
1
Dec,12,2014
www.samhop.com.tw
No Preview Available ! |
SDU/D06N60
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=3A
VDS=10V , ID=3A
VDS=25V,VGS=0V
f=1.0MHz
VDD=300V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=4A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=60mH,VDD = 50V.(See Figure13)
e.Mounted on FR4 Board of 1 inch2 , 2oz copper.
Typ Max Units
1
±100
V
uA
nA
34V
1.18 1.48 ohm
9S
950 pF
91 pF
13 pF
30 ns
16 ns
50 ns
15 ns
15 nC
2.4 nC
5.8 nC
0.8 1.4
V
Dec,12,2014
2 www.samhop.com.tw
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SDU/D06N60
10
VGS =10V
8 VGS =5V
6
4
2 VGS =4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
Ver 1.0
3.0
2.4
1.8
T j=125 C
1.2
25 C
-55 C
0.6
0
0 1.0 2.0 3.0 4.0 5.0 6.0
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
3.0
2.5
2.0
1.5 V GS =10V
1.0
0.5
0
0.1 2 4 6 8 10
ID, Drain Current(A)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
3.0
2.6
2.2 V G S =10V
ID=3A
1.8
1.4
1.0
0
0 25 50 75 100 125 150
Tj, Junction Temperature(° C ) T j( C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
V DS =V G S
ID=250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 5. Gate Threshold Variation
with Temperature
3
1.15
ID=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature(°C )
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,12,2014
www.samhop.com.tw
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SDD06N60 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
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