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BCW68GL PDF даташит

Спецификация BCW68GL изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «General Purpose Transistors».

Детали детали

Номер произв BCW68GL
Описание General Purpose Transistors
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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BCW68GL Даташит, Описание, Даташиты
BCW68GL
General Purpose Transistor
PNP Silicon
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO −45 Vdc
Collector−Base Voltage
VCBO −60 Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−800
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
−55 to +150
°C
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
DG MG
G
DG = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping
BCW68GLT1G,
SOT−23 3000 / Tape &
NSVBCW68GLT1G (Pb−Free)
Reel
BCW68GLT3G
SOT−23 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 7
1
Publication Order Number:
BCW68GLT1/D









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BCW68GL Даташит, Описание, Даташиты
BCW68GL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc, VEB = 0)
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
Collector Cutoff Current
(VCE= −45 Vdc, IE = 0)
(VCE= −45 Vdc, IB = 0, TA = 150°C)
Emitter Cutoff Current (VEB = −4.0 Vdc, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
−45
− Vdc
V(BR)CES
−60
− Vdc
V(BR)EBO
−5.0
− Vdc
ICES
IEBO
− − −20 nAdc
− − −10 mAdc
− − −20 nAdc
DC Current Gain
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
(IC = −300 mAdc, VCE = −1.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
Base−Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
SMALL−SIGNAL CHARACTERISTICS
hFE
120 − 400
160 −
60 −
VCE(sat) − − −0.7 Vdc
VBE(sat) − − −2.0 Vdc
Current−Gain − Bandwidth Product
(IC = −20 mAdc, VCE = −10 Vdc, f = 100 MHz)
fT
100 −
− MHz
Output Capacitance
(VCB= −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
− − 18 pF
Input Capacitance
(VEB= −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo − − 105 pF
Noise Figure
(IC= −0.2 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF − − 10 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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BCW68GL Даташит, Описание, Даташиты
BCW68GL
TYPICAL CHARACTERISTICS
500
150°C
400
300 25°C
200
−55°C
100
VCE = 1 V
1
IC/IB = 10
0.1
25°C
150°C
−55°C
0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
1
1.1
1.0 IC/IB = 10
0.9
0.8
0.7
0.6
0.5
−55°C
25°C
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Base Emitter Saturation Voltage vs.
Collector Current
1
1000
VCE = 1 V
TA = 25°C
0.01
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
−55°C
0.8
25°C
0.7
0.6
0.5 150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Voltage vs. Collector
Current
100
10
0.1
1
10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 5. Current Gain Bandwidth Product vs.
Collector Current
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