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HBT169M PDF даташит

Спецификация HBT169M изготовлена ​​​​«KERSEMI» и имеет функцию, называемую «THYRISTORS».

Детали детали

Номер произв HBT169M
Описание THYRISTORS
Производители KERSEMI
логотип KERSEMI логотип 

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HBT169M Даташит, Описание, Даташиты
HBT169M
THYRISTORS
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended
for use in general purpose switching and phase control applications. These
devices are intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
Quick Reference Data
Symbol
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
Parameter
Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
Pin Configuration
Pin Description
1 Gate
2 Anode
3 Cathode
123
Limtiing Values
Symbol
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj
Parameter
Repetitive peak off-state voltages
Average on-state current (half sine wave; Tlead83°C)
RMS on-state current (all conduction angles)
Non-repetitive peak on-state current (t=10ms)
Non-repetitive peak on-state current (t=8.3ms)
I2t for fusing (t=10ms)
Repetitive rate of rise of on-state current after triggering
(ITM=2A; IG=10mA; dIG/dt=100mA/us)
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power (over any 20ms period)
Storage temperature
Operating junction temperature
SOT-89
Max.
400
0.5
0.8
8
Unit
V
A
A
A
Symbol
A
K
G
Min. Max. Units
- 400 V
- 0.5 A
- 0.8 A
- 8A
- 9A
- 0.32 A2S
- 50 A/us
- 1A
- 5V
5V
- 2W
- 0.1 W
- 150 °C
- 125 °C
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HBT169M Даташит, Описание, Даташиты
Thermal Resistances
Symbol
Parameter
Conditions
Min. Typ. Max. Unit
Rth j-lead Thermal resistance junction to lead
pcb mounted;
- - 60 K/W
Rth j-a Thermal resistance junction to ambient lead length=4mm - 150 - K/W
Static Characteristics (Ta=25°C)
Symbol
Parameter
IGT Gate Trigger Current
IL Latching Current
IH Holding Current
VT On-state Voltage
VGT Gate Trigger Voltage
ID,IR
Off-state Leakage
Current
Conditions
VD=12V, IT=10mA
Gate open circuit
VD=12V, IGT=0.5mA; RGK=1k
VD=12V, IGT=0.5mA; RGK=1k
IT=1A
VD=12V, IT=10mA
Gate open circuit
VD= VDRM(max), IT=10mA; Tj=125°C
Gate open circuit
VD=VDRM(max); VR= VRRM(max);
Tj=125°C; RGK=1k
Min.
-
-
-
-
-
0.2
-
Typ.
50
2
2
1.2
0.5
0.2
0.05
Max.
200
6
5
1.35
0.8
-
0.1
Unit
uA
mA
mA
V
V
V
mA
Static Characteristics
Symbol
dVD/dt
tgt
tq
Parameter
Conditions
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Circuit commutated
turn-off time
VDM=67% VDRM(max); Tj=125°C
exponential waveform; RGK=1k
ITM=2A; VD=VDRM(max)
IG=10mA; dIG/dt=0.1A/us
VD=67% VDRM(max); Tj=125°C
ITM=1.6A; VR=35V; dITM/dt=30A/us
dVD/dt=2V/us; RGK=1k
Min.
500
-
-
Typ.
800
2
100
Max.
-
-
-
Unit
V/us
us
us
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HBT169M Даташит, Описание, Даташиты
Characteristics Curve
Normalised Gate Trigger Current IGT(Ta)/IGT(25oC),
Versus Air Temperature Ta
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-25
25 75 125
Ta(oC)
175
Typical & Maximum On-state Characteristic
5
typ 25ºC 125ºC
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0
VT/V
2.5
Normalised Gate Trigger Voltage VGT(Ta)/VGT(25oC),
Versus Air Temperature Ta
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0 50 100 150
Ta(oC)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
Normalised Holding Current IH(Ta)/IH(25oC),
Versus Air Temperature Ta
20 40 60 80 100 120 140
Ta/(oC)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-25
Normalised Latching Current IL(Ta)/IL(25oC),
Vrsus Air Temperature Ta
0 25 50 75 100 125 150
Ta(oC)
Maximum On-atate Dissipation, Ptot Versus Average
On-state Current, IT(AV) a=conduction angle
1.0
0.9
a=90º
a=120º
a=180º
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 0.2 0.4 0.6 0.8 1.0
IF(AV)/A
www.kersemi.com










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Номер в каталогеОписаниеПроизводители
HBT169MTHYRISTORSKERSEMI
KERSEMI
HBT169MTHYRISTORSHi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics

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