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HBT138F-600 PDF даташит

Спецификация HBT138F-600 изготовлена ​​​​«SHANTOU HUASHAN» и имеет функцию, называемую «INSULATED TYPE TRIAC».

Детали детали

Номер произв HBT138F-600
Описание INSULATED TYPE TRIAC
Производители SHANTOU HUASHAN
логотип SHANTOU HUASHAN логотип 

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HBT138F-600 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
HT138F-600
INSULATED TYPE TRIAC (TO-220F PACKAGE)
Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=12A)
* High Commutation dv/dt
*Isolation VoltageVISO=1500V AC
General Description
TO-220F
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
Absolute Maximum RatingsTa=25℃)
12 3
Tstg——Storage Temperature………………………………………………………………… -40~150
Tj ——Operating Junction Temperature …………………………………………………… -40~125
PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
ITRMS)——R.M.S On-State CurrentTc=58℃)………………………………………………… 12A
VGM——Peak Gate Voltage…………………………………………………………………………… 10V
IGM——Peak Gate Current…………………………………………………………………………… 2.0A
ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 100/110A
VISO——Isolation Breakdown VoltageR.M.SA.C.1minute)………………………………………1500V
Electrical CharacteristicsTa=25℃)
Symbol
Items
Min Max Unit
Conditions
IDRM Repetitive Peak Off-State Current
2.0 mA VD=VDRM,Single Phase,Half
Wave, TJ=125
VTM Peak On-State Voltage
1.65 V IT=15A, Inst. Measurement
I+GT1 Gate Trigger Current(Ⅰ)
25 mA VD=6V, RL=10 ohm
I-GT1 Gate Trigger Current(Ⅱ)
25 mA VD=6V, RL=10 ohm
I-GT3 Gate Trigger Current(Ⅲ)
25 mA VD=6V, RL=10 ohm
V+GT1 Gate Trigger Voltage(Ⅰ)
1.5 V VD=6V, RL=10 ohm
V-GT1 Gate Trigger Voltage(Ⅱ)
1.5 V VD=6V, RL=10 ohm
V-GT3 Gate Trigger Voltage(Ⅲ)
1.5 V VD=6V, RL=10 ohm
VGD
(dv/dt)c
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
0.2
10
V TJ=125,VD=1/2VDRM
V/µS TJ=125,VD=2/3VDRM (di/dt)c=-4A/ms
IH Holding Current
Rth(j-c) Thermal Resistance
15 mA
3.7 /W Junction to case









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HBT138F-600 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
Performance Curves
HBT138F-600









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HBT138F-600 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
HBT138F-600










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Номер в каталогеОписаниеПроизводители
HBT138F-600INSULATED TYPE TRIACSHANTOU HUASHAN
SHANTOU HUASHAN

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