HBT138F-600 PDF даташит
Спецификация HBT138F-600 изготовлена «SHANTOU HUASHAN» и имеет функцию, называемую «INSULATED TYPE TRIAC». |
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Детали детали
Номер произв | HBT138F-600 |
Описание | INSULATED TYPE TRIAC |
Производители | SHANTOU HUASHAN |
логотип |
3 Pages
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Shantou Huashan Electronic Devices Co.,Ltd.
HT138F-600
INSULATED TYPE TRIAC (TO-220F PACKAGE)
█ Features
* Repetitive Peak Off-State Voltage: 600V
* R.M.S On-State Current(IT(RMS)=12A)
* High Commutation dv/dt
*Isolation Voltage(VISO=1500V AC)
█ General Description
TO-220F
This device is fully isolated package suitable for AC switching application,
phase control application such as fan speed and temperature modulation
control, lighting control and static switching relay.
█ Absolute Maximum Ratings(Ta=25℃)
12 3
Tstg——Storage Temperature………………………………………………………………… -40~150℃
Tj ——Operating Junction Temperature …………………………………………………… -40~125℃
PGM——Peak Gate Power Dissipation………………………………………………………………… 5W
VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V
IT(RMS)——R.M.S On-State Current(Tc=58℃)………………………………………………… 12A
VGM——Peak Gate Voltage…………………………………………………………………………… 10V
IGM——Peak Gate Current…………………………………………………………………………… 2.0A
ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 100/110A
VISO——Isolation Breakdown Voltage(R.M.S,A.C.1minute)………………………………………1500V
█ Electrical Characteristics(Ta=25℃)
Symbol
Items
Min Max Unit
Conditions
IDRM Repetitive Peak Off-State Current
2.0 mA VD=VDRM,Single Phase,Half
Wave, TJ=125℃
VTM Peak On-State Voltage
1.65 V IT=15A, Inst. Measurement
I+GT1 Gate Trigger Current(Ⅰ)
25 mA VD=6V, RL=10 ohm
I-GT1 Gate Trigger Current(Ⅱ)
25 mA VD=6V, RL=10 ohm
I-GT3 Gate Trigger Current(Ⅲ)
25 mA VD=6V, RL=10 ohm
V+GT1 Gate Trigger Voltage(Ⅰ)
1.5 V VD=6V, RL=10 ohm
V-GT1 Gate Trigger Voltage(Ⅱ)
1.5 V VD=6V, RL=10 ohm
V-GT3 Gate Trigger Voltage(Ⅲ)
1.5 V VD=6V, RL=10 ohm
VGD
(dv/dt)c
Non-Trigger Gate Voltage
Critical Rate of Rise of Off-State
Voltage at Commutation
0.2
10
V TJ=125℃,VD=1/2VDRM
V/µS TJ=125℃,VD=2/3VDRM (di/dt)c=-4A/ms
IH Holding Current
Rth(j-c) Thermal Resistance
15 mA
3.7 ℃/W Junction to case
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Shantou Huashan Electronic Devices Co.,Ltd.
█ Performance Curves
HBT138F-600
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Shantou Huashan Electronic Devices Co.,Ltd.
HBT138F-600
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Номер в каталоге | Описание | Производители |
HBT138F-600 | INSULATED TYPE TRIAC | SHANTOU HUASHAN |
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