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HBT151 PDF даташит

Спецификация HBT151 изготовлена ​​​​«SHANTOU HUASHAN» и имеет функцию, называемую «Silicon Controlled Rectifier».

Детали детали

Номер произв HBT151
Описание Silicon Controlled Rectifier
Производители SHANTOU HUASHAN
логотип SHANTOU HUASHAN логотип 

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HBT151 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
HBT151
Silicon Controlled Rectifier
Features
* Repetitive Peak Off-State Voltage : 600V
* R.M.S On-State Current(IT(RMS)=12A)
* Average On-State Current (IT(AV)=7.5A)
* Non-isolated Type
General Description
Passivated thyristors in a plastic envelope, intended for use in
applications requiring high bidirectional blocking voltage
capability and high thermal cycling performance. Typical applications
include motor control, industrial and domestic lighting, heating and static
switching.
Absolute Maximum Ratings Ta=25
Tstg Storage Temperature ------------------------------------------------------ 40~150
Tj Operating Junction Temperature --------------------------------------------------- 125
VDRM Repetitive Peak Off-State Voltage -------------------------------------------------------------------- 600V
IT RMS
R.M.S On-State Current all conduction angles ----------------------------------------------12A
IT(AV)
ITSM
I2t
Average On-State Current (Half Sine Wave : TC = 109 °C) ----------------------------------------7.5A
Surge On-State Current (1/2 Cycle, 50Hz, Sine Wave, Non-repetitive) -------------------------- 100A
Circuit Fusing Considerations(t = 10ms) ------------------------------------------------------------- 50A2s
PGM Forward Peak Gate Power Dissipation (Ta=25 --------------------------------------------------- 5W
PG(AV)
Forward Average Gate Power Dissipation (over any 20 ms period ----------------------------0.5W
IFGM
VRGM
Forward Peak Gate Current -------------------------------------------------------------------------------- 2A
Reverse Peak Gate Voltage ------------------------------------------------------------------------------- 5V









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HBT151 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
HBT151
Electrical Characteristics Ta=25
Symbol
IDRM
Items
Repetitive Peak Off-State
Current
VTM Peak On-State Voltage (1)
Min. Typ.
Max.
20
500
1.75
Unit Conditions
VA K = VD R M
uA Tc=25
Tc=125
V ITM=23A,tp=380µs
IGT Gate Trigger Current 2
15 mA VAK =12V(DC), RL=10 ohm
VG T Gate Trigger Voltage (2)
VGD Non-Trigger Gate Voltage
IH Holding Current
Rth(j-c) Thermal Resistance
Rth(j-a) Thermal Resistance
dv/dt Critical Rate of Rise Off-state
Voltage
0.2
50
1.5 V VAK =12V(DC), RL=10 ohm
Tc=25
V VAK =12V, RL=100 ohm
Tc=125
IT=100mA,Gate open,
20 mA Tc=25
1.3 /W Junction to Case
60 /W Junction to Ambient
V/µs Linear slope up to
VD= VDRM67%
Gate open Tj=125
1. Forward current applied for 1 ms maximum duration,duty cycle 1%.
2. RGK current is not included in measurement
Performance Curves









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HBT151 Даташит, Описание, Даташиты
Shantou Huashan Electronic Devices Co.,Ltd.
Performance Curves
HBT151










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Номер в каталогеОписаниеПроизводители
HBT151Silicon Controlled RectifierSHANTOU HUASHAN
SHANTOU HUASHAN

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