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SD103CWS-G PDF даташит

Спецификация SD103CWS-G изготовлена ​​​​«Vishay» и имеет функцию, называемую «Small Signal Schottky Diodes».

Детали детали

Номер произв SD103CWS-G
Описание Small Signal Schottky Diodes
Производители Vishay
логотип Vishay логотип 

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SD103CWS-G Даташит, Описание, Даташиты
www.vishay.com
SD103AWS-G, SD103BWS-G, SD103CWS-G
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.0 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• The SD103 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing, and coupling diodes for fast
switching and low logic level applications
• Other applications are click suppression,
efficient full wave bridges in telephone subsets,
and blocking diodes in rechargeable low voltage
battery systems
• For general purpose applications
• AEC-Q101 qualified available
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
SD103AWS-G3-08 or SD103AWS-G3-18
SD103AWS-G
SD103AWS-HG3-08 or SD103AWS-HG3-18
SD103BWS-G3-08 or SD103BWS-G3-18
SD103BWS-G
SD103BWS-HG3-08 or SD103BWS-HG3-18
SD103CWS-G3-08 or SD103CWS-G3-18
SD103CWS-G
SD101CWS-HG3-08 or SD101CWS-HG3-18
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
Z6
REMARKS
Single diode
Z7 Tape and reel
Single diode
Z8
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1)
Single cycle surge
Power dissipation (1)
10 μs square wave
SD103AWS-G
SD103BWS-G
SD103CWS-G
VRRM
VRRM
VRRM
IF
IFSM
Ptot
Note
(1) Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
40
30
20
350
2
200
VALUE
500
125
-55 to +125
-55 to +150
UNIT
V
V
V
mA
A
mW
UNIT
K/W
°C
°C
°C
Rev. 1.4, 21-Nov-13
1 Document Number: 81142
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









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SD103CWS-G Даташит, Описание, Даташиты
www.vishay.com
SD103AWS-G, SD103BWS-G, SD103CWS-G
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop
Diode capacitance
Reverse recovery time
VR = 30 V
VR = 20 V
VR = 10 V
IF = 20 mA
IF = 200 mA
VR = 0 V, f = 1 MHz
IF = IR = 50 mA to 200 mA,
recover to 0.1 IR
SD103AWS-G
SD103BWS-G
SD103CWS-G
IR
IR
IR
VF
VF
CD
trr
TYP.
50
10
MAX.
5
5
5
370
600
UNIT
μA
μA
μA
mV
mV
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
100
10
1
0.1
0.01
0
18488
0.2 0.4 0.6 0.8
VF - Forward Voltage (V)
1.0
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
1000
100
10
1
0.1
Tamb = 125 °C
100 °C
75 °C
50 °C
25 °C
0.01
0 5 10 15 20 25 30 35 40 45 50
20084
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
5
4 tp = 300 ms
duty cycle = 2 %
3
2
1
0
0
18489
0.5 1.0
VF - Forward Voltage (V)
1.5
Fig. 2 - Typical High Current Forward Conduction Curve
100
10
1
0
18491
10 20 30 40
VR - Reverse Voltage (V)
50
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.4, 21-Nov-13
2 Document Number: 81142
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000









No Preview Available !

SD103CWS-G Даташит, Описание, Даташиты
www.vishay.com
SD103AWS-G, SD103BWS-G, SD103CWS-G
Vishay Semiconductors
50
40
30
I F = 400 mA
20
100 mA
200 mA
10
0
0
18492
100 200
Tamb - Ambient Temperature (°C)
Fig. 5 - Blocking Voltage Deration vs. Temperature at Various Average Forward Currents
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
Cathode bar
1.95 (0.077)
1.60 (0.063)
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
0.6 (0.024)
Rev. 1.4, 21-Nov-13
3 Document Number: 81142
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000










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