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BCY79-VII PDF даташит

Спецификация BCY79-VII изготовлена ​​​​«Central Semiconductor» и имеет функцию, называемую «SILICON PNP TRANSISTORS».

Детали детали

Номер произв BCY79-VII
Описание SILICON PNP TRANSISTORS
Производители Central Semiconductor
логотип Central Semiconductor логотип 

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BCY79-VII Даташит, Описание, Даташиты
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
SILICON
PNP TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCY78 and BCY79
series types are silicon PNP epitaxial planar transistors,
mounted in a hermetically sealed metal case, designed
for low noise amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
PD
PD
TJ, Tstg
JA
JC
BCY78
32
BCY79
45
32 45
5.0
100
200
200
340
1.0
-65 to +200
450
150
UNITS
V
V
V
mA
mA
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICBO
VCB=Rated VCBO, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10μA (BCY78)
32
BVCBO
IC=10μA (BCY79)
45
BVCEO
IC=2.0mA (BCY78)
32
BVCEO
IC=2.0mA (BCY79)
45
BVEBO
IE=1.0μA
5.0
VCE(SAT) IC=10mA, IB=250μA
VCE(SAT) IC=100mA, IB=2.5mA
VBE(SAT) IC=10mA, IB=250μA
0.60
VBE(SAT) IC=100mA, IB=2.5mA
0.70
VBE(ON)
VCE=5.0V, IC=2.0mA
0.60
MAX
15
10
20
0.25
0.80
0.85
1.20
0.75
BCY78-VII BCY78-VIII BCY78-IX
BCY79-VII BCY79-VIII BCY79-IX
MIN TYP MAX MIN MAX MIN MAX
hFE VCE=5.0V, IC=10μA
- 140 -
30 -
40 -
hFE VCE=5.0V, IC=2.0mA 120 - 220 180 310 250 460
hFE VCE=1.0V, IC=10mA
80 - -
120 400 160 630
hFE
VCE=1.0V, IC=100mA
40 - -
45 -
60 -
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
V
V
BCY78-X
BCY79-X
MIN MAX
100 -
380 630
240 1000
60 -
R4 (4-June 2013)









No Preview Available !

BCY79-VII Даташит, Описание, Даташиты
BCY78, VII, VIII, IX, X
BCY79, VII, VIII, IX, X
SILICON
PNP TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
fT VCE=5.0V, IC=10mA, f=100MHz
100
Cob VCB=10V, IE=0, f=1.0MHz
Cib VEB=0.5V, IC=0, f=1.0MHz
NF VCE=5.0V, IC=0.2mA, Rs=2.0kΩ, f=1.0kHz, B=200Hz
ton VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
td VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tr VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
toff VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
ton VCC=10V, IC=100mA, IB1=IB2=10mA
td VCC=10V, IC=100mA, IB1=IB2=10mA
tr VCC=10V, IC=100mA, IB1=IB2=10mA
toff VCC=10V, IC=100mA, IB1=IB2=10mA
ts VCC=10V, IC=100mA, IB1=IB2=10mA
tf VCC=10V, IC=100mA, IB1=IB2=10mA
MAX
7.0
15
10
100
50
50
700
600
100
100
35
65
400
300
100
TO-18 CASE - MECHANICAL OUTLINE
UNITS
MHz
pF
pF
dB
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R4 (4-June 2013)










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Номер в каталогеОписаниеПроизводители
BCY79-VIISILICON PNP TRANSISTORSCentral Semiconductor
Central Semiconductor
BCY79-VIIISILICON PNP TRANSISTORSCentral Semiconductor
Central Semiconductor

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