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PDF HM62A16100LBPI-7 Data sheet ( Hoja de datos )
| Número de pieza | HM62A16100LBPI-7 | |
| Descripción | 16M SRAM | |
| Fabricantes | Renesas | |
| Logotipo |  |
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HM62A16100I Series
Wide Temperature Range Version
16 M SRAM (1-Mword × 16-bit)
REJ03C0053-0001Z
Preliminary
Rev. 0.01
Jun.02.2003
Description
The Renesas HM62A16100I Series is 16-Mbit static RAM organized 1-Mword × 16-bit. HM62A16100I
Series has realized higher density, higher performance and low power consumption by employing CMOS
process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it
is suitable for battery backup systems. It has the package variations of 48-bump chip size package with
0.75 mm bump pitch for high density surface mounting.
Features
• Single 1.8 V supply: 1.65 V to 2.2 V
• Fast access time: 70 ns (max)
• Power dissipation:
Active: 3.6 mW/MHz (typ)
Standby: 0.9 µW (typ)
• Completely static memory.
No clock or timing strobe required
• Equal access and cycle times
• Common data input and output.
Three state output
• Battery backup operation.
2 chip selection for battery backup
• Temperature range: −40 to +85°C
Preliminary: The specification of this device are subject to change without notice. Please contact your
nearest Renesas Technology’s Sales Dept. regarding specification.
Rev.0.01, Jun.02.2003, page 1 of 17
1 page  
HM62A16100I Series
Operation Table
CS1 CS2 WE OE UB LB I/O0 to I/O7
H × × × × × High-Z
× L × × × × High-Z
× × × × H H High-Z
L H H L L L Dout
L H H L H L Dout
L H H L L H High-Z
L H L × L L Din
L H L × H L Din
L H L × L H High-Z
L H H H × × High-Z
Note: H: VIH, L: VIL, ×: VIH or VIL
I/O8 to I/O15
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to VSS
Terminal voltage on any pin relative to VSS
Power dissipation
Storage temperature range
VCC
VT
PT
Tstg
Storage temperature range under bias
Tbias
Notes:
1.
V min:
T
−2.0 V for pulse half-width ≤ 10 ns.
2. Maximum voltage is +2.6 V.
Value
−0.3 to + 2.6
−0.3*1 to VCC + 0.3*2
1.0
−55 to +125
−40 to +85
Unit
V
V
W
°C
°C
DC Operating Conditions
Parameter
Symbol Min
Typ
Supply voltage
Input high voltage
Input low voltage
Ambient temperature range
VCC 1.65 1.8
VSS 0
0
VIH 0.75 × VCC
VIL −0.3
Ta −40
Note: 1. VIL min: −2.0 V for pulse half-width ≤ 10 ns.
Max Unit
2.2 V
0V
VCC + 0.3 V
0.25 × VCC V
85 °C
Note
1
Rev.0.01, Jun.02.2003, page 5 of 17
5 Page 
HM62A16100I Series
Write Cycle (1) (WE Clock)
Address
CS1
CS2
LB, UB
WE
Din
Dout
tAS
tWC
Valid address
tCW
tCW
tBW
tWR
tAW
tWP
tWHZ
tDW tDH
Valid data
tOW
High impedance
Rev.0.01, Jun.02.2003, page 11 of 17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet HM62A16100LBPI-7.PDF ] | |
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