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PDF S-LDTC144TET1G Data sheet ( Hoja de datos )
| Número de pieza | S-LDTC144TET1G | |
| Descripción | Bias Resistor Transistor | |
| Fabricantes | Leshan Radio Company | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de S-LDTC144TET1G (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
LDTC144TET1G
S-LDTC144TET1G
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
1
BASE
R1
Parameter
Symbol
Limits
Unit
SC-89
3
COLLECTOR
2
EMITTER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
Pc
Tj
Tstg
50
50
5
100
200
150
−55 to +150
V
V
mA
mW
°C
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTC144TET1G
S-LDTC144TET1G
LDTC144TET3G
S-LDTC144TET3G
H5
H5
47 -
47 -
3000/Tape & Reel
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 50
Collector-emitter breakdown voltage BVCEO 50
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
DC current transfer ratio
hFE 100
Input resistance
R1 32.9
Transition frequency
Characteristics of built-in transistor
fT ∗ −
Typ.
−
−
−
−
−
−
250
47
250
Max.
−
−
−
0.5
0.5
0.3
600
61.1
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC=10µA
IC=2.0mA
IE=50µA
VCB=50V
VEB=4V
IC/IB=5mA/0.5mA
VCE=5V, IC=1mA
−
VCE=10V, IE= −5mA, f=100MHz
Rev.O 1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet S-LDTC144TET1G.PDF ] | |
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