|
|
Número de pieza | HCD6N70S | |
Descripción | 700V N-Channel Super Junction MOSFET | |
Fabricantes | SemiHow | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HCD6N70S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! June 2015
HCD6N70S / HCU6N70S
700V N-Channel Super Junction MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 7 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
BVDSS = 700 V
RDS(on) typ ȍ
ID = 3.0 A
D-PAK I-PAK
2
1
3
HCD6N70S
1
2
3
HCU6N70S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700
3.0
1.9
8.0
ρ20
25
0.9
0.1
50
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25)
- Derate above 25
2.1
28
0.22
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
4.4
50
110
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͦ͑͢͡
1 page Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͻΦΟΖ͑ͣͦ͑͢͡
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet HCD6N70S.PDF ] |
Número de pieza | Descripción | Fabricantes |
HCD6N70S | 700V N-Channel Super Junction MOSFET | SemiHow |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |