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HCU70R600S PDF даташит

Спецификация HCU70R600S изготовлена ​​​​«SemiHow» и имеет функцию, называемую «700V N-Channel Super Junction MOSFET».

Детали детали

Номер произв HCU70R600S
Описание 700V N-Channel Super Junction MOSFET
Производители SemiHow
логотип SemiHow логотип 

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HCU70R600S Даташит, Описание, Даташиты
June 2015
HCD70R600S / HCU70R600S
700V N-Channel Super Junction MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 16 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
BVDSS = 700 V
RDS(on) typ = 0.54 ȍ
ID = 7.3 A
D-PAK I-PAK
2
1
1
32
3
HCD70R600S HCU70R600S
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
700
7.3
4.6
22
ρ20
120
2.0
0.5
15
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25)
- Derate above 25
2.5
69
0.55
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC
RșJA
Junction-to-Case
Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.8
50
110
Units
/W
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HCU70R600S Даташит, Описание, Даташиты
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage
Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 3.5 A
2.8
--
Off Characteristics
BVDSS
IDSS
IGSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VGS = 0 V, ID = 250
VDS = 700 V, VGS = 0 V
VDS = 560 V, TJ = 125
VGS = ρ20 V, VDS = 0 V
700
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
--
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 350 V, ID = 7.3 A,
RG = 25 Ÿ
VDS = 560 V, ID = 7.3 A,
VGS = 10 V
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 7.3 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 3.5 A, VGS = 0 V
diF/dt = 100 A/ȝV
--
--
--
--
--
-- 4.2
0.54 0.6
-- --
-- 10
-- 100
-- ρ100
500 --
250 --
7 --
4 --
20 --
20 --
60 --
20 --
16 --
4.0 --
5.5 --
-- 7.3
-- 22
-- 1.3
250 --
2 --
V
Ÿ
V
Ÿ
nC
nC
nC
A
V
uC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS=2A, VDD=50V, RG=25:, Starting TJ =25qC
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HCU70R600S Даташит, Описание, Даташиты
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
101
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
100
100
* Notes :
1. 300us Pulse Test
2. TC = 25oC
101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.6
1.2
VGS = 10V
0.8
VGS = 20V
0.4
Note : TJ = 25oC
0.0
0 4 8 12 16
ID, Drain Current [A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
4000
3000
2000
Coss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss ds gd
Crss = Cgd
1000
* Note ;
1. V = 0 V
GS
Ciss 2. f = 1 MHz
Crss
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10
25oC
1 150oC
0.1
2
-25oC
46
* Notes :
1. VDS= 30V
2. 300us Pulse Test
8 10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
1
0.1
0.0
150oC 25oC
* Notes :
1. V = 0V
GS
2. 300us Pulse Test
0.2 VSD, S0.o4urce-Dr0a.6in Voltag0e.8 [V] 1.0
1.2
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 140V
10
V = 350V
DS
V = 560V
DS
8
6
4
2
Note : ID = 7.3A
0
0 3 6 9 12 15 18
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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