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H5N5006LS PDF даташит

Спецификация H5N5006LS изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N Channel MOS FET».

Детали детали

Номер произв H5N5006LS
Описание Silicon N Channel MOS FET
Производители Renesas
логотип Renesas логотип 

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H5N5006LS Даташит, Описание, Даташиты
H5N5006LD, H5N5006LS, H5N5006LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1115-0100
(Previous: ADE-208-1549)
Rev.1.00
Apr 07, 2006
Features
Low on-resistance
Low leakage current
High speed switching
Low gate charge
Avalanche ratings
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H5N5006LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H5N5006LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H5N5006LM
S
Rev.1.00 Apr 07, 2006 page 1 of 7









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H5N5006LS Даташит, Описание, Даташиты
H5N5006LD, H5N5006LS, H5N5006LM
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Channel dissipation
Channel to case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Tch 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 3
Pch Note 2
θ ch-c
Tch
Tstg
Ratings
500
±30
3.5
14
3.5
3.5
50
2.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body to drain diode forward voltage
Body to drain diode reverse recovery time
Body to drain diode reverse recovery
charge
Note: 4. Pulse test
Symbol
V (BR) DSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
VDF
trr
Qrr
Min
500
3.0
1.8
Typ
2.5
3.0
365
35
8
20
13
48
14
14
2
8
0.85
280
0.8
Max
±0.1
1
4.5
3.0
1.3
Unit
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 500 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 1.75 A, VGS = 10 V Note 4
ID = 1.75 A, VDS = 10 V Note 4
VDS = 25 V
VGS = 0
f = 1 MHz
VDD 250 V, ID = 1.75 A
RL = 143
VGS = 10 V
Rg = 10
VDD = 400 V
VGS = 10 V
ID = 3.5 A
IF = 3.5 A, VGS = 0
IF = 3.5 A, VGS = 0
diF/dt = 100 A/µs
Rev.1.00 Apr 07, 2006 page 2 of 7









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H5N5006LS Даташит, Описание, Даташиты
H5N5006LD, H5N5006LS, H5N5006LM
Main Characteristics
Power vs. Temperature Derating
80
60
40
20
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
5
Pulse Test
4
10 V
8V
6V
3
5.5 V
2
1 5V
VGS = 4.5 V
0
0 4 8 12 16 20
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
20
Pulse Test
16
12
ID = 3 A
8
2A
4 1A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.1.00 Apr 07, 2006 page 3 of 7
Maximum Safe Operation Area
50
10
PW = 10 ms (1shot)
100
10
µs
µs
1
0.1 Operation in
this area is
limited by RDS (on)
0.01 Ta = 25°C
0.005
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
5
VDS = 10 V
Pulse Test
4
3
2
Tc = 75°C
25°C
1
–25°C
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5 VGS = 10 V, 15 V
2
1
0.5
0.2
0.1
0.1 0.2
0.5 1
2
5
Drain Current ID (A)
10










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