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H7N0307AB PDF даташит

Спецификация H7N0307AB изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N Channel MOS FET».

Детали детали

Номер произв H7N0307AB
Описание Silicon N Channel MOS FET
Производители Renesas
логотип Renesas логотип 

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H7N0307AB Даташит, Описание, Даташиты
H7N0307AB
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS (on) = 4.6 mtyp.
Low drive current
4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A
(Package name: TO-220AB)
123
G
D
S
REJ03G1120-0300
(Previous: ADE-208-1568A)
Rev.3.00
Sep 07, 2005
1. Gate
2. Drain (Flange)
3. Source
Rev.3.00 Sep 07, 2005 page 1 of 6









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H7N0307AB Даташит, Описание, Даташиты
H7N0307AB
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
Pch Note 2
θ ch-c
Tch
Tstg
Value
30
±20
60
240
60
90
1.39
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
Symbol
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (off)
RDS (on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
30 — —
V ID = 10 mA, VGS = 0
±20 —
V IG = ±100 µA, VDS = 0
— — ±10 µA VGS = ±16 V, VDS = 0
— — 10 µA VDS = 30 V, VGS = 0
1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note 3
— 4.6 5.8 mID = 30 A, VGS = 10 V Note 3
— 8.0 11.5 mID = 30 A, VGS = 4.5 V Note 3
40 65 —
S ID = 30 A, VDS = 10 V Note 3
— 2500 —
pF VDS = 10 V
— 650 —
pF VGS = 0
— 350 —
pF f = 1 MHz
— 40 — nC VDD = 10 V
— 7 — nC VGS = 10 V
— 8 — nC ID = 60 A
— 20 —
— 300 —
— 70 —
ns VGS = 10 V, ID = 30 A
ns RL = 0.33
ns Rg = 4.7
— 20 — ns
— 0.92 —
— 60 —
V IF = 60 A, VGS = 0
ns IF = 60 A, VGS = 0
diF/dt = 50 A/µs
Rev.3.00 Sep 07, 2005 page 2 of 6









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H7N0307AB Даташит, Описание, Даташиты
H7N0307AB
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0
0 50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
10 V
40 4.5 V
3.5 V
Pulse Test
30
20
3V
10
VGS = 2.5 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
0.08
ID = 10 A
0.04
5A
2A
0
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.3.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
500
100
10
DC
1 ms
OperationPW = 10
100
ms
10
µs
µs
1 Operation in
this area is
limited by RDS(on)
0.1
Tc = 25°C
1 shot Pulse
0.01
0.1 0.3 1 3 10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
50
VDS = 10 V
Pulse Test
40
30
25°C
20
Tc = 75°C
–25°C
10
0
012345
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
VGS = 4.5 V
10
5
10 V
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)










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