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PDF H7N0307LM Data sheet ( Hoja de datos )
| Número de pieza | H7N0307LM | |
| Descripción | Silicon N Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1121-0700
(Previous: ADE-208-1516E)
Rev.7.00
Apr 07, 2006
Features
• Low on-resistance
RDS (on) = 4.6 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
4
123
H7N0307LD
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
123
1. Gate
2. Drain
3. Source
4. Drain
H7N0307LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
D
G
123
H7N0307LM
S
Rev.7.00 Apr 07, 2006 page 1 of 7
1 page  
H7N0307LD, H7N0307LS, H7N0307LM
Reverse Drain Current vs.
Souece to Drain Voltage
100
80
10 V
VGS = 0
60
5V
40
20
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03
0.02
0.01
1shot
pulse
0.01
10 µ
100 µ
θch – c (t) = γ s (t) • θch – c
θch – c = 1.38°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
10 V
VDS
= 10 V
Switching Time Waveform
Vin
Vout
10%
10%
td(on)
90%
tr
90%
90%
td(off)
10%
tf
Rev.7.00 Apr 07, 2006 page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet H7N0307LM.PDF ] | |
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