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S-L2SA1365GLT1G PDF даташит

Спецификация S-L2SA1365GLT1G изготовлена ​​​​«Leshan Radio Company» и имеет функцию, называемую «General Purpose Transistor».

Детали детали

Номер произв S-L2SA1365GLT1G
Описание General Purpose Transistor
Производители Leshan Radio Company
логотип Leshan Radio Company логотип 

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S-L2SA1365GLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor,
designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.2V typ
●Excellent linearity of DC forward current gain.
●Super mini package for easy mounting
●High collector current ICM=-1A
●High gain band width product fT =180MHz typ
●We declare that the material of product compliance with RoHS requirements.
●We declare that the material of product is ROHS compliant
●S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements, AEC-Q101 Qualified and PPAP Capable.
L2SA1365*LT1G
S-L2SA1365*LT1G
3
1
2
SOT–23
APPLICATION
Small type motor drive, relay drive, power supply.
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VCBO Collector to Base voltage
VCEO Collector to Emitter voltage
VEBO Emitter to Base voltage
I O Collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
-25
-20
-4
-7 00
150
+125
-55~+125
Unit
V
V
V
mA
mW
3
COLLECTOR
1
BASE
ORDERING INFORMATION
2
EMITTER
Device
Marking
L2SA1365ELT1G
S-L2SA1365ELT1G
L2SA1365ELT3G
S-L2SA1365ELT3G
L2SA1365FLT1G
S-L2SA1365FLT1G
L2SA1365FLT3G
S-L2SA1365FLT3G
L2SA1365GLT1G
S-L2SA1365GLT1G
L2SA1365GLT3G
S-L2SA1365GLT3G
AE
AE
AF
AF
AG
AG
Shipping
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Symbol
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
I C=-10μA , I E =0
I E=-10μA , I C =0
I C=-100μA ,R BE=∞
V CB=-25V, I E=0mA
V EB=-2V, I C=0mA
V CE=-4V, I C=-100mA
I C=-500mA ,IB=-25mA
V CE=-6V, I E=10mA
※) It shows hFE classification in below table.
Item
EFG
hFE Item
150~300 250~500 400~800
Limits
Min Typ
-25 -
-4 -
-20 -
--
--
150 -
- -0.2
- 180
Max
-
-
-
-1
-1
800
-0.5
-
Unit
V
V
V
μA
μA
V
MHz
Rev.O 1/3









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S-L2SA1365GLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
L2SA1365*LT1G
S-L2SA1365*LT1G
Rev.O 2/3









No Preview Available !

S-L2SA1365GLT1G Даташит, Описание, Даташиты
LESHAN RADIO COMPANY, LTD.
L2SA1365*LT1G
S-L2SA1365*LT1G
A
L
3
BS
12
VG
C
D
H
K
0.037
0.95
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
INCHES
MILLIMETERS
MIN MAX MIN MAX
A 0.1102 0.1197 2.80 3.04
B 0.0472 0.0551 1.20 1.40
C 0.0350 0.0440 0.89 1.11
D 0.0150 0.0200 0.37 0.50
G 0.0701 0.0807 1.78 2.04
H 0.0005 0.0040 0.013 0.100
J 0.0034 0.0070 0.085 0.177
J K 0.0140 0.0285 0.35 0.69
L 0.0350 0.0401 0.89 1.02
S 0.0830 0.1039 2.10 2.64
V 0.0177 0.0236 0.45 0.60
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.035
0.9
0.079
2.0
0.031
0.8
inches
mm
Rev.O 3/3










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Номер в каталогеОписаниеПроизводители
S-L2SA1365GLT1GGeneral Purpose TransistorLeshan Radio Company
Leshan Radio Company

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