SDZNMMDHER-032G PDF даташит
Спецификация SDZNMMDHER-032G изготовлена «SanDisk» и имеет функцию, называемую «4LC 3V NAND Flash Memory». |
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Детали детали
Номер произв | SDZNMMDHER-032G |
Описание | 4LC 3V NAND Flash Memory |
Производители | SanDisk |
логотип |
30 Pages
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43nm
8GB (32Gb x 2-die)
16GB (32Gb x 4-die)
32GB (32Gb x 8-die)
4LC 3V NAND Flash Memory Data Sheet
Preliminary Version
Rev 1.3
March 11, 2009
Part Numbers: SDZNMMBHER-008G
SDZNMMCHER-016G
SDZNMMDHER-032G
Proprietary and Confidential
Copyright © 2009 by SanDisk Corporation and its applicable affiliates. All rights reserved.
This specification is confidential and is subject to any SanDisk Corporation handbooks or terms of use
provided or made available to the customer. This specification is subject to change and/or being updated
without notice. The customer assumes sole and exclusive responsibility for compliance with safety,
environmental, export, trade, and other applicable laws and regulations with respect to this specification.
In addition, the customer assumes sole and exclusive responsibility for any use, embedded or otherwise,
of device(s) described by this specification in any medical, aviation, nuclear, or ultra-hazardous
applications, as well as in applications that could cause property damage, bodily injury, or death.
All specifications are subject to change without notice.
For memory capacity, 1 megabyte (MB) = 1 million bytes, and 1 gigabyte (GB) = 1 billion bytes.
Some of the listed capacity is used for formatting and other functions, and thus is not available for
data storage.
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SDZNMM(B/C/D)HER-0(08/16/32)G
43nm 8GB / 16GB / 32GB 4LC 3V NAND Flash Memory Data Sheet
Revision History
Version
Preliminary
Preliminary
Preliminary
Preliminary
Revision
0.3
1.0
1.1
1.2
Date
Changes
01/09/09 Initial release.
01/14/09 Added Package Marking Spec; minor changes.
02/10/09 Updated timing diagrams.
03/09/09
Updated the following sections to clarify the Power On Reset
current consumption:
• 1.7 Power-On/Off Sequence
• 1.8 Power On Reset
• 1.14 DC Characteristics
Updated the following sections to clarify the parameter value
in multi-die package:
• 1.2 Features
• 1.11 Capacitance
• 1.12 Valid Blocks
• 1.14 DC Characteristics
Preliminary 1.3 03/11/09 Updated Package Marking Specification.
Preliminary Version, rev1.3
SanDisk Proprietary and Confidential
page ii
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SDZNMM(B/C/D)HER-0(08/16/32)G
43nm 8GB / 16GB / 32GB 4LC 3V NAND Flash Memory Data Sheet
Table of Contents
1. Device Overview...............................................................................................................5
1.1 Description ...............................................................................................................5
1.2 Features...................................................................................................................5
1.3 Pin Assignment ........................................................................................................6
1.4 52-Pin LGA Package Outline Drawing......................................................................7
1.5 Pin Functions ...........................................................................................................8
1.6 Pin Decoding Tables ................................................................................................9
1.7 Power-On/Off Sequence ........................................................................................10
1.8 Power On Reset.....................................................................................................10
1.9 Write Protect Signal................................................................................................11
1.10 Absolute Maximum Ratings....................................................................................12
1.11 Capacitance ...........................................................................................................12
1.12 Valid Blocks ...........................................................................................................12
1.13 Recommended DC Operating Conditions...............................................................13
1.14 DC Characteristics .................................................................................................13
1.15 AC Characteristics and Recommended Operating Conditions................................14
1.16 AC Test Conditions ................................................................................................15
1.17 Programming and Erasing Characteristics .............................................................15
2. Address Assignment......................................................................................................16
3. Timing Diagrams ............................................................................................................17
3.1 Write Timing ...........................................................................................................17
3.2 Read Timing...........................................................................................................17
3.3 Latch Timing for Command/Address/Data..............................................................18
3.4 Command Input Cycle Timing ................................................................................18
3.5 Address Input Cycle Timing....................................................................................19
3.6 Data Input Cycle Timing .........................................................................................19
3.7 Serial Read Cycle Timing .......................................................................................20
3.8 Status Read Cycle Timing ......................................................................................20
3.9 Read Cycle Timing .................................................................................................21
3.10 Read Cycle Timing: When Interrupted by Command Enable..................................21
3.11 Read Cycle with Data Cache Timing (1/2)..............................................................22
3.12 Read Cycle with Data Cache Timing (2/2)..............................................................23
3.13 Column Address Change in Read Cycle Timing (1/2).............................................24
3.14 Column Address Change in Read Cycle Timing (2/2).............................................25
Preliminary Version, rev1.3
SanDisk Proprietary and Confidential
page iii
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Номер в каталоге | Описание | Производители |
SDZNMMDHER-032G | 4LC 3V NAND Flash Memory | SanDisk |
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