NCE1502R PDF даташит
Спецификация NCE1502R изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET». |
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Детали детали
Номер произв | NCE1502R |
Описание | N-Channel Enhancement Mode Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
7 Pages
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http://www.ncepower.com
Pb Free Product
NCE1502R
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE1502R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS = 150V,ID = 2A
RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
D
G
S
Schematic diagram
SOT-223-3L view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE1502R
NCE1502R
SOT-223-3L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
150
±20
2
6
2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
62.5 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=250μA
VDS=150V,VGS=0V
Min Typ Max Unit
150 -
-
V
- - 1 μA
Wuxi NCE Power Semiconductor Co., Ltd
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Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Pb Free Product
NCE1502R
VGS=±20V,VDS=0V
- - ±100 nA
VDS=VGS,ID=250μA
VGS=10V, ID=1.5A
VDS=15V,ID=1.5A
1.5 2.0
- 260
-3
2.5
300
-
V
mΩ
S
VDS=25V,VGS=0V,
F=1.0MHz
- 235
- 36
- 20
-
-
-
PF
PF
PF
-8
VDD=75V,ID=1A,RL=75Ω - 10
VGS=10V,RG=6Ω
- 20
- 15
VDS=75V,ID=1.5A,
VGS=10V
-8
- 1.4
- 2.1
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
VGS=0V,IS=2A
- - 1.2
--
2
V
A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to product
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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http://www.ncepower.com
Test Circuit
1) EAS Test Circuit
2)Gate Charge Test Circuit
3)Switch Time Test Circuit
NCE1502R
Pb-Free Product
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
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