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NCE60R540F PDF даташит

Спецификация NCE60R540F изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET ��».

Детали детали

Номер произв NCE60R540F
Описание N-Channel Super Junction Power MOSFET ��
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE60R540F Даташит, Описание, Даташиты
NCE60R540D,NCE60R540,NCE60R540F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS@Tjmax
RDS(ON) MAX
ID
650
540
8
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R540D
TO-263
NCE60R540D
NCE60R540
TO-220
NCE60R540
NCE60R540F
TO-220F
NCE60R540F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE60R540D
NCE60R540F
NCE60R540
600
±30
8 8*
5.2 5.2*
24 24*
80 31.7
0.64 0.25
185
4
0.4
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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NCE60R540F Даташит, Описание, Даташиты
NCE60R540D,NCE60R540,NCE60R540F
Parameter
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Symbol
dv/dt
dv/dt
TJ,TSTG
NCE60R540D
NCE60R540F
NCE60R540
50
15
-55...+150
Unit
V/ns
V/ns
°C
Table 2. Thermal Characteristic
Parameter
Symbol
NCE60R540D
NCE60R540
Thermal ResistanceJunction-to-CaseMaximum
RthJC
1.56
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
NCE60R540F
3.94
80
Unit
°C /W
°C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4A
600
1
100
±100
2.5 3
3.5
480 540
V
μA
μA
nA
V
m
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 4A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=480V,ID=8A,
VGS=10V
Qgd
RG f = 1 MHz open drain
5.5
680
58
4
14.5 22
2.8
5.5
2
S
pF
pF
pF
nC
nC
nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=4A,
RG=12,VGS=10V
5.5
3.5
55 75
6.5 10
nS
nS
nS
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
ISD
ISDM
TC=25°C
VSD Tj=25°C,ISD=8A,VGS=0V
trr
Qrr Tj=25°C,IF=8A,di/dt=100A/μs
Irrm
8
23.4
0.9 1.2
220
2.2
20
A
A
V
nS
uC
A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
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NCE60R540F Даташит, Описание, Даташиты
NCE60R540D,NCE60R540,NCE60R540F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
v1.0










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